128/121/115 WATT
nA-V128h5 nA-V121h5 nA-V115h5
Amorphous Silicon/microcrystalline Silicon
ELECTRICAL DATA |
| NAmEpLATE VALUEs |
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|
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Maximum power | Pmax | 128 |
Voc | 238 | |
Isc | 0.846 | |
Voltage at maximum power | Vpmax | 186 V |
Current at maximum power | Ipmax | 0.688 A |
Module efficiency | η | 9.0% |
Temperature coefficient – open circuit voltage | β |
|
Temperature coefficient – short circuit current | α |
|
Temperature coefficient – power | γ |
|
121
238
0.830
180V 0.673 A
8.5%
+0.07%/°C
115
238
0.810
174V 0.661 A
8.1%
MADE IN JAPAN
The electrical data applies under standard test conditions (STC): Irradiance of 1,000 W/m2 with an AM 1.5 spectrum at a cell temperature of 25º C. The power output is subject to a manufacturing tolerance of + 10% / - 5%
Output values are post initial
spECIfICATIONs (I)
Cell | Tandem architecture of amorphous and microcrystalline silicon |
Cell Circuit | 45 cells in series by 6 in parallel per quadrant: 4 quadrants |
| in series |
Dimensions | 39.7” x 55.5” x 1.8” (1009 x 1409 x 46 mm) |
Weight | 42 lbs |
Connection type | Cable with |
Bypass diodes | 4 (one per quadrant) |
Fire Rating | Class C |
spECIfICATIONs (II)
Maximum system voltage | 1,000 | VDC |
Maximum mechanical load | 2,400 | Pa |
Series Fuse Rating | 2 | A |
Operating temperature (cell) | - 40 to +90 | °C |
Storage temperature | - 40 to +90 | °C |
Storage air humidity | Up to 90 | % |
Installation orientation | Portrait |
|
Design and specifications are subject to change without notice.
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of their respective owners. Contact Sharp to obtain the latest product manuals before using any Sharp device.
EXTERIOR DImENsIONs
| BACK ViEW | SiDE ViEW | ||
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| A | E |
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| D | |
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| f |
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D | E |
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| C |
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| A |
| B | C |
39.7”/1009 mm | 55.5”/1409 mm | 1.8”/46 mm | ||
| D |
| E | f |
3.9”/100 mm | 1.2”/30.5 mm | 35.4”/900 mm |
SHARP ELECTRONICS CORPORATION
5901 Bolsa Avenue, Huntington Beach, CA 92647
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