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3-3. SCHEMATIC DIAGRAMS AND PRINTED WIRING BOARDS
Note:
• | All capacitors are in µF unless otherwise noted. (pF: µµF) | • Divided circuit diagram | |||||
| Capacitors without voltage indication are all 50 V. | One sheet of B and Q boards are circuit diagram is divided into three sheets, | |||||
• Indication of resistance, which does not have one for rating electrical | |||||||
each having the code | |||||||
| power, is as follows. | ||||||
| ab1 on the code | ||||||
| Pitch: 5 mm | ||||||
| a b 1 | ||||||
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| Rating electrical power 1/4 W (CHIP : 1/10 W) |
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| Ref. No. | ||
• | All resistors are in ohms. |
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| Circuit diagram division code | |||||
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| : nonflammable resistor. |
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| : fusible resistor. |
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• | T | : internal component. |
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• |
| : panel designation, and adjustment for repair. |
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• | All variable and adjustable resistors have characteristic curve B, unless |
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•When replacing the part in below table, be sure to perform the related adjustment.
•All voltages are in V.
•Readings are taken with a 10 M digital multimeter.
•Readings are taken with a
•Voltage variations may be noted due to normal production tolerances.
• | * | : Can not be measured. |
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•Circled numbers are waveform references.
•: B + bus.
• : B – bus.
Note: The components identified by shading and mark ! are critical for safety. Replace only with part number specified.
Note: Les composants identifié s par un tramé et une marque ! sont critiques pour la sé curité . Ne les remplacer que par une piè ce portant le numé ro spé cifié .
Terminal name of semiconductors in silk screen
printed circuit (*) |
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| Device | Printed symbol | Terminal name |
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1 | Transistor |
| Collector |
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| Base | Emitter |
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2 | Transistor |
| Collector |
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| Base | Emitter |
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3 | Diode |
| Cathode |
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| Anode |
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4 Diode |
| Cathode |
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| Anode | (NC) |
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| Cathode |
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5 | Diode |
| Anode | (NC) |
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| Common |
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6 Diode |
| Anode | Cathode |
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7 | Diode |
| Common |
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| Anode | Cathode |
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8 Diode |
| Common |
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| Anode | Anode |
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9 | Diode |
| Common |
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| Anode | Anode |
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0 Diode |
| Common |
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| Cathode | Cathode |
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!¡ | Diode |
| Common |
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| Cathode | Cathode |
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!™ |
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| Anode | Cathode |
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Diode |
| Anode | Anode |
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| Cathode | Anode |
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!£ | Transistor |
| Drain | Source |
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(FET) |
| Gate | D |
| D | ||
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| G | G |
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!¢ | Transistor |
| Drain | Source | S |
| S |
| (FET) |
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| Gate |
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| Transistor |
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| Source | D | D |
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!∞ |
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| Drain |
| G | G | ||
| (FET) |
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| Gate | S | S |
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!§ |
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| Emitter |
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Transistor |
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| Base |
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| C1 | C2 |
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!¶ | Transistor |
| C2 B1 E1 | B1 |
| B2 | |
| E2 B2 C1 |
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| E1 | E2 |
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!• | Transistor |
| C1 B2 E2 |
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| E1 B1 C2 | C1 | C2 |
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| B1 |
| B2 |
!ª | Transistor |
| C1 B2 E2 | E1 | E2 |
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| E1 B1 C2 |
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| E1 | E2 |
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@º | Transistor |
| C1 B2 E2 | B1 |
| B2 | |
| E1 B1 C2 |
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| C1 | C2 |
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| C1(B2) | C2 |
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@¡ | Transistor |
| E2 | B1 E1 | B1 |
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| C2 | C1(B2) |
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| E2 | E2 |
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| (B2) | E1(B2) | E2 |
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@™ | Transistor |
| B1 E1 E2 | B1 |
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| C1 | C2 |
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| C1 | C2 |
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| (B2) | E1(B2) | C2 |
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@£ | Transistor |
| E2 E1 B1 | B1 |
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| C2 | C1 |
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| C1 | C2 |
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– | Discrete semiconductot |
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(Chip semiconductors that are not actually used are included.) | Ver.1.6 |
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