Transcend Information 2GSDM80, TS128M

128M~2GB miniSD Memory Card

Transcend Information Inc.

Bus Operating Conditions

• General

Parameter Symbol Min. Max. Unit Remark

Peak voltage on all lines -0.3 VDD+0.3 V

All Inputs

Input Leakage Current -10 10 µA

All Outputs

Output Leakage Current -10 10 µA

• Power Supply Voltage

Parameter Symbol Min. Max. Unit Remark

Supply voltage VDD 2.0 3.6 V CMD0, 15,55,ACMD41

commands

Supply voltage specified in OCR register 2.7 3.6 V Except CMD0, 15,55,

ACMD41 commands

Supply voltage differentials (VSS1, VSS2) -0.3 0.3 V

Power up time 250 ms From 0v to VDD Min.

Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.

• Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus

capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for

up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:

Parameter Symbol Min. Max. Unit Remark

Bus signal line capacitance CL 100 pF fPP ≤ 20 MHz, 7 cards

Single card capacitance CCARD 10 pF

Maximum signal line inductance 16 nH fPP ≤ 20 MHz

Pull-up resistance inside card (pin1) RDAT3 10 90 kΩ May be used for card

detection

Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are

connected separately to the SD Memory Card host.

Parameter Symbol Min. Max. Unit Remark

Pull-up resistance RCMD, RDAT 10 100 kΩ To prevent bus floating

Bus signal line capacitance CL 250 pF fPP ≤ 5 MHz, 21 cards