Cypress CY62128B manual Switching Characteristics7 Over the Operating Range, Switching Waveforms

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CY62128B

MoBL®

Switching Characteristics[7] Over the Operating Range

 

 

 

 

 

 

62128B-55

62128B-70

 

Parameter

 

 

 

 

Description

 

 

 

 

Unit

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

READ CYCLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

Read Cycle Time

55

 

70

 

ns

tAA

 

Address to Data Valid

 

55

 

70

ns

tOHA

 

Data Hold from Address Change

5

 

5

 

ns

tACE

 

 

1 LOW to Data Valid, CE2 HIGH to Data Valid

 

55

 

70

ns

CE

 

 

tDOE

 

 

 

 

LOW to Data Valid

 

20

 

35

ns

OE

 

 

tLZOE

 

 

 

 

LOW to Low Z

0

 

0

 

ns

OE

 

 

tHZOE

 

 

 

 

HIGH to High Z[7, 9]

 

20

 

25

ns

OE

 

 

tLZCE

 

 

1 LOW to Low Z, CE2 HIGH to Low Z[9]

5

 

5

 

ns

CE

 

 

tHZCE

 

 

1 HIGH to High Z, CE2 LOW to High Z[8, 9]

 

20

 

25

ns

CE

 

 

tPU

 

 

1 LOW to Power-up, CE2 HIGH to Power-up

0

 

0

 

ns

CE

 

 

tPD

 

 

1 HIGH to Power-down, CE2 LOW to Power-down

 

55

 

70

ns

CE

 

 

WRITE CYCLE

[10]

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

Write Cycle Time

55

 

70

 

ns

tSCE

 

 

1 LOW to Write End, CE2 HIGH to Write End

45

 

60

 

ns

CE

 

 

tAW

 

Address Set-up to Write End

45

 

60

 

ns

tHA

 

Address Hold from Write End

0

 

0

 

ns

tSA

 

Address Set-up to Write Start

0

 

0

 

ns

tPWE

 

 

 

 

Pulse Width

45

 

50

 

ns

WE

 

 

tSD

 

Data Set-up to Write End

25

 

30

 

ns

tHD

 

Data Hold from Write End

0

 

0

 

ns

tLZWE

 

 

 

 

HIGH to Low Z[9]

5

 

5

 

ns

WE

 

 

tHZWE

 

 

 

 

LOW to High Z[8, 9]

 

20

 

25

ns

WE

 

 

Switching Waveforms

Read Cycle No.1[12, 13]

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

 

 

tOHA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PREVIOUS DATA VALID

 

 

 

 

 

 

 

 

 

DATA VALID

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

7. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 100-pF load capacitance.

8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.

9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

10. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. CE1 and WE must be LOW and CE2 HIGH to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

11. No input may exceed VCC + 0.5V.

12. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.

13. WE is HIGH for read cycle.

Document #: 38-05300 Rev. *C

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin ConfigurationsPin Definitions SoicRange Ambient Temperature T Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeCapacitance6 Thermal Resistance6AC Test Loads and Waveforms Data Retention WaveformSwitching Waveforms Switching Characteristics7 Over the Operating RangeRead Cycle Write CycleWrite Cycle No CE1 or CE2 Controlled15 Read Cycle No OE Controlled13Write Cycle No.3 WE Controlled, OE LOW15 Write Cycle No WE Controlled, OE High During Write15Data I/O Data Invalid DATAI/O Data ValidOrdering Information 0-I/O Mode PowerTruth Table Lead Thin Small Outline Package Type I 8x20 mm Z32 Package DiagramsLead 450 MIL Molded Soic S34 Lead Reverse Thin Small Outline Package ZR32 Lead Shrunk Thin Small Outline Package 8x13.4 mm ZA32REV ECN no Issue Orig. Description of Change DateDocument History

CY62128B specifications

The Cypress CY62128B is a high-performance static random-access memory (SRAM) device designed to deliver reliable data storage solutions in a variety of applications. This device is particularly notable for its speed and high-density capabilities, making it suitable for both consumer electronics and industrial applications.

One of the main features of the CY62128B is its organization as a 128K-bit memory chip, which typically comes in a 16K x 8-bit configuration. This allows for efficient processing and storage of data, enabling quick access times. The device boasts access times of 55 ns, making it an excellent choice for applications that require fast data retrieval and processing. Such speed is crucial for modern computing tasks, where delays can significantly impact overall performance.

In addition to its speed, the CY62128B incorporates low-power consumption technology, which is vital for battery-operated devices and other energy-sensitive applications. The operating current is typically in the range of 30 mA, while the standby current is a mere 0.02 mA when the chip is not in use. This combination of low power and high-speed functionality ensures that the device operates efficiently in a wide range of conditions.

The CY62128B also features a wide operating voltage range, accommodating both 2.7V to 5.5V. This versatility allows it to be employed in diverse environments and devices, adapting as necessary to various power supply configurations. Its compatibility with different voltage levels enhances its usability in portable electronics and various embedded systems.

Additionally, the CY62128B benefits from a fast transition between read and write operations, thanks to its asynchronous memory structure. This means that data can be changed and accessed without the need for complex timing sequences, promoting simplicity in system design and reducing overhead.

Another significant characteristic is the robust reliability of the CY62128B, which uses advanced CMOS technology. The chip is built to withstand challenging operating conditions, such as extreme temperatures and radiation exposure, making it suitable for aerospace and military applications.

In summary, the Cypress CY62128B is a versatile and reliable SRAM solution, offering high density, fast access times, low power consumption, and a broad operating voltage range. These features make it an ideal choice for diverse applications, from consumer electronics to industrial systems. Its combination of speed, efficiency, and reliability reflects the innovation that Cypress is known for in the semiconductor industry.