Cypress CY7C1399B manual Data Retention Waveform, Switching Waveforms, Read Cycle No

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CY7C1399B

Data Retention Waveform

 

 

DATA RETENTION MODE

 

VCC

3.0V

VDR > 2V

3.0V

 

tCDR

 

tR

CE

 

 

 

Switching Waveforms

Read Cycle No. 1[10, 11]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

 

 

 

 

DATA VALID

 

 

 

 

 

 

 

 

 

 

Read Cycle No. 2[11, 12]

 

 

 

CE

 

tRC

 

 

 

 

 

tACE

 

 

OE

 

 

 

 

tDOE

tHZOE

 

 

tHZCE

 

 

tLZOE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

 

tLZCE

tPD

 

 

tPU

 

VCC

 

ICC

SUPPLY

50%

 

50%

CURRENT

 

 

ISB

Notes:

10.Device is continuously selected. OE, CE = VIL.

11.WE is HIGH for read cycle.

12.Address valid prior to or coincident with CE transition LOW.

Document #: 38-05071 Rev. *A

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Contents Functional Description FeaturesLogic Block Diagram Selection GuideMaximum Ratings Pin ConfigurationElectrical Characteristics Over the Operating Range1 Operating RangeCapacitance4 AC Test Loads and WaveformsParameter Description Test Conditions Max Unit Switching Characteristics Over the Operating Range5 1399B-10 1399B-12 Parameter Description Min Max Unit1399B-15 1399B-20 Parameter Description Min Max Unit Parameter Description Conditions Min Max UnitSwitching Waveforms Data Retention WaveformRead Cycle No Write Cycle No WE Controlled, OE LOW9 Write Cycle No WE Controlled8, 13Write Cycle No CE Controlled8, 13 Data I/O Data InvalidInput/Output Mode Power Ordering InformationPackage Diagrams Lead 300-Mil Molded SOJLead Thin Small Outline Package Type 1 8x13.4 mm Z28 Add Low Power Revision HistoryChange from Spec # 38-01102 to

CY7C1399B specifications

The Cypress CY7C1399B is a high-performance static random-access memory (SRAM) device that belongs to the family of asynchronous CMOS SRAMs. It is designed to deliver superior speed and efficiency, making it ideal for a multitude of applications in various fields, including telecommunications, automotive, and consumer electronics.

One of the key features of the CY7C1399B is its high-speed operation, capable of achieving access times as low as 12 nanoseconds. This allows for rapid data retrieval, which is crucial in applications requiring fast data processing and real-time performance. Moreover, it operates with a single supply voltage of 2.0V to 3.6V, providing flexibility for power-sensitive designs.

The chip comes with a capacity of 16 megabits, which enables it to store substantial amounts of data. Furthermore, it features a burst mode operation that allows for efficient access to multiple consecutive data locations. This capability makes it particularly useful in applications such as video processing, where quick data retrieval is essential.

Another prominent characteristic of the CY7C1399B is its low power consumption. The device boasts both active and standby power modes, which help minimize energy usage, making it suitable for battery-operated devices. This is increasingly becoming a vital factor for consumer electronics, where energy efficiency is a priority.

In terms of interface, the CY7C1399B uses a conventional parallel interface, compatible with a variety of microcontrollers and processors. The device also supports an asynchronous read and write operation, which simplifies integration into existing systems.

The chip is built using advanced 0.18-micron CMOS technology, which not only enhances its performance but also contributes to its reliability and durability. This technology allows the CY7C1399B to achieve high integration density, resulting in a smaller footprint on printed circuit boards (PCBs).

With a combination of high-speed operational characteristics, low power consumption, and substantial data capacity, the Cypress CY7C1399B stands out as an excellent choice for designers seeking efficient memory solutions that can support the demands of modern electronic systems.