Cypress CY7C1399B manual Revision History, Change from Spec # 38-01102 to, Add Low Power

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CY7C1399B

 

 

 

 

 

 

 

Revision History

 

 

 

 

 

 

 

 

Document Title: CY7C1399B 32K x 8 3.3V Static RAM

 

Document Number: 38-05071

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ORIG. OF

 

REV.

ECN NO.

 

ISSUE DATE

CHANGE

DESCRIPTION OF CHANGE

 

 

 

 

 

 

 

**

107264

 

 

05/25/01

SZV

Change from Spec #: 38-01102 to 38-05071

 

 

 

 

 

 

 

*A

107533

 

 

06/28/01

MAX

Add Low Power

 

 

 

 

 

 

 

Document #: 38-05071 Rev. *A

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Contents Functional Description FeaturesLogic Block Diagram Selection GuideMaximum Ratings Pin ConfigurationElectrical Characteristics Over the Operating Range1 Operating RangeAC Test Loads and Waveforms Capacitance4Parameter Description Test Conditions Max Unit Switching Characteristics Over the Operating Range5 1399B-10 1399B-12 Parameter Description Min Max Unit1399B-15 1399B-20 Parameter Description Min Max Unit Parameter Description Conditions Min Max UnitData Retention Waveform Switching WaveformsRead Cycle No Write Cycle No WE Controlled, OE LOW9 Write Cycle No WE Controlled8, 13Write Cycle No CE Controlled8, 13 Data I/O Data InvalidInput/Output Mode Power Ordering InformationLead 300-Mil Molded SOJ Package DiagramsLead Thin Small Outline Package Type 1 8x13.4 mm Z28 Revision History Add Low PowerChange from Spec # 38-01102 to

CY7C1399B specifications

The Cypress CY7C1399B is a high-performance static random-access memory (SRAM) device that belongs to the family of asynchronous CMOS SRAMs. It is designed to deliver superior speed and efficiency, making it ideal for a multitude of applications in various fields, including telecommunications, automotive, and consumer electronics.

One of the key features of the CY7C1399B is its high-speed operation, capable of achieving access times as low as 12 nanoseconds. This allows for rapid data retrieval, which is crucial in applications requiring fast data processing and real-time performance. Moreover, it operates with a single supply voltage of 2.0V to 3.6V, providing flexibility for power-sensitive designs.

The chip comes with a capacity of 16 megabits, which enables it to store substantial amounts of data. Furthermore, it features a burst mode operation that allows for efficient access to multiple consecutive data locations. This capability makes it particularly useful in applications such as video processing, where quick data retrieval is essential.

Another prominent characteristic of the CY7C1399B is its low power consumption. The device boasts both active and standby power modes, which help minimize energy usage, making it suitable for battery-operated devices. This is increasingly becoming a vital factor for consumer electronics, where energy efficiency is a priority.

In terms of interface, the CY7C1399B uses a conventional parallel interface, compatible with a variety of microcontrollers and processors. The device also supports an asynchronous read and write operation, which simplifies integration into existing systems.

The chip is built using advanced 0.18-micron CMOS technology, which not only enhances its performance but also contributes to its reliability and durability. This technology allows the CY7C1399B to achieve high integration density, resulting in a smaller footprint on printed circuit boards (PCBs).

With a combination of high-speed operational characteristics, low power consumption, and substantial data capacity, the Cypress CY7C1399B stands out as an excellent choice for designers seeking efficient memory solutions that can support the demands of modern electronic systems.