CY7C1012DV33
Data Retention Characteristics
Over the Operating Range
Parameter | Description |
| Conditions [3] | Min | Typ | Max | Unit | |
VDR | VCC for Data Retention |
|
|
| 2 |
|
| V |
ICCDR | Data Retention Current | VCC = 2V, | CE | > VCC – 0.2V, |
|
| 25 | mA |
|
| VIN > VCC – 0.2V or VIN < 0.2V |
|
|
|
| ||
tCDR [11] | Chip Deselect to Data Retention |
|
|
| 0 |
|
| ns |
| Time |
|
|
|
|
|
|
|
tR [12] | Operation Recovery Time |
|
|
| tRC |
|
| ns |
Data Retention Waveform
|
| DATA RETENTION MODE |
|
VCC | 3.0V | VDR > 2V | 3.0V |
| tCDR |
| tR |
CE |
|
|
|
Switching Waveforms
Figure 3. Read Cycle No. 1 [13, 14]
tRC
ADDRESS
tAA
tOHA
DATA OUT | PREVIOUS DATA VALID |
|
|
|
| DATA VALID |
|
| |||||
|
|
|
|
|
|
|
Figure 4. Read Cycle No. 2 (OE Controlled) [3, 14, 15]
ADDRESS |
|
|
|
|
| tRC |
|
CE |
|
|
|
OE | tACE |
|
|
|
|
| |
| tDOE | tHZOE |
|
| tHZCE |
| |
| tLZOE | HIGH | |
DATA OUT | HIGH IMPEDANCE | DATA VALID | IMPEDANCE |
|
| ||
| tLZCE | tPD | ICC |
| tPU | ||
VCC | 50% |
| 50% |
SUPPLY |
|
| ISB |
CURRENT |
|
|
|
Notes
11.Tested initially and after any design or process changes that may affect these parameters.
12.Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 μs or stable at VCC(min) > 50 μs.
13.Device is continuously selected. OE, CE = VIL.
14.WE is HIGH for read cycle.
15.Address valid before or similar to CE transition LOW.
Document Number: | Page 6 of 11 |
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