Cypress CY7C1339G manual Pin Configurations Ball BGA Pinout, Pin Definitions, Name Description

Page 3

CY7C1339G

Pin Configurations (continued)

119-Ball BGA Pinout

 

1

2

3

 

 

4

 

 

 

 

 

 

 

5

 

 

6

7

A

VDDQ

A

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A

VDDQ

 

ADSP

B

NC/288M

CE2

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

A

NC/9M

NC/576M

 

ADSC

C

NC/144M

A

 

 

A

 

 

 

 

VDD

 

A

A

NC/1G

D

DQC

NC

 

 

VSS

 

 

 

 

 

NC

 

VSS

NC

DQB

E

DQC

DQC

 

 

VSS

 

 

 

 

 

 

1

 

 

 

VSS

DQB

DQB

 

 

 

 

CE

F

VDDQ

DQC

 

 

VSS

 

 

 

 

 

 

 

 

 

 

 

VSS

DQB

VDDQ

 

 

 

 

 

OE

G

DQC

DQC

 

 

 

 

c

 

 

 

 

 

 

 

 

 

 

 

B

DQB

DQB

BW

 

 

 

ADV

BW

H

DQC

DQC

 

 

VSS

 

 

 

 

 

 

 

 

VSS

DQB

DQB

 

 

 

 

GW

J

VDDQ

VDD

 

 

NC

 

 

 

 

VDD

 

NC

VDD

VDDQ

K

DQD

DQD

 

 

VSS

 

 

 

CLK

 

VSS

DQA

DQA

L

DQD

DQD

 

 

D

 

 

 

 

 

NC

 

 

A

DQA

DQA

BW

 

 

 

 

 

 

BW

M

VDDQ

DQD

 

 

VSS

 

 

 

 

 

VSS

DQA

VDDQ

 

 

 

 

BWE

 

N

DQD

DQD

 

 

VSS

 

 

 

 

 

A1

 

VSS

DQA

DQA

P

DQD

NC

 

 

VSS

 

 

 

 

 

A0

 

VSS

NC

DQA

R

NC

A

MODE

 

 

 

 

VDD

 

NC

A

NC

T

NC

NC/72M

 

 

A

 

 

 

 

 

A

 

A

NC/36M

ZZ

U

VDDQ

NC

 

 

NC

 

 

 

 

 

NC

 

NC

NC

VDDQ

Pin Definitions

 

 

 

Name

I/O

Description

 

 

A0, A1, A

Input-

Address Inputs used to select one of the 128K address locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

 

 

Synchronous

of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1, A0

 

 

 

 

 

 

 

 

 

 

 

are fed to the two-bit counter..

 

 

 

 

 

A,

 

B

Input-

Byte Write Select Inputs, active LOW. Qualified with

 

to conduct byte writes to the SRAM.

 

 

BW

BW

BWE

 

 

BWC, BWD

Synchronous

Sampled on the rising edge of CLK.

 

 

 

 

 

 

 

 

Input-

Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global

 

 

GW

 

 

 

 

 

 

 

 

 

 

Synchronous

write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE).

 

 

 

 

 

 

 

 

Input-

Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be

 

 

BWE

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW to conduct a byte write.

 

 

CLK

Input-

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the

 

 

 

 

 

 

 

 

 

 

Clock

burst counter when ADV is asserted LOW, during a burst operation.

 

 

 

1

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only

 

 

 

 

 

 

 

 

 

 

 

when a new external address is loaded.

 

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device.CE2 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

loaded.

 

 

 

3

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

loaded. Not connected for BGA. Where referenced, CE3 is assumed active throughout this

 

 

 

 

 

 

 

 

 

 

 

document for BGA.

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When

 

 

OE

 

 

 

 

 

 

 

 

 

 

Asynchronous

LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as

 

 

 

 

 

 

 

 

 

 

 

input data pins. OE is masked during the first clock of a read cycle when emerging from a

 

 

 

 

 

 

 

 

 

 

 

deselected state.

Document #: 38-05520 Rev. *F

 

 

Page 3 of 18

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1250 MHz 200 MHz 166 MHz 133 MHz Unit Pin ConfigurationsSelection Guide CY7C1339GByte Write Select Inputs, active LOW. Qualified with Pin Configurations Ball BGA PinoutPin Definitions Name DescriptionFunctional Overview Interleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Adsp Adsc ADV Write CLK Operation Add. UsedPartial Truth Table for Read/Write 2 FunctionBWE BW D BW C BW B BW a Maximum Ratings Operating RangeAmbient Range Tqfp BGA Capacitance11Thermal Resistance11 AC Test Loads and WaveformsOutput Times 250 200 166 133 Parameter Description Unit Min MaxMin Max ClockRead Cycle Timing18 Switching WaveformsWrite Cycle Timing18 Read/Write Cycle Timing18, 20 DON’T Care ZZ Mode Timing 22Ordering Information Pin Tqfp 14 x 20 x 1.4 mm Package Diagrams90±0.05 Ball BGA 14 x 22 x 2.4 mmIssue Date Orig. Description of Change Document HistoryREV ECN no