Cypress CY7C1018CV33 manual Features, Functional Description1, Logic Block Diagram, Soj

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CY7C1018CV33

128K x 8 Static RAM

Features

Pin- and function-compatible with CY7C1018BV33

High speed

tAA = 10 ns

CMOS for optimum speed/power

Center power/ground pinout

Data retention at 2.0V

Automatic power-down when deselected

Easy memory expansion with CE and OE options

Available in Pb-free and non Pb-free 300-mil-wide 32-pin SOJ

Functional Description[1]

device has an automatic power-down feature that significantly reduces power consumption when deselected.

Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1018CV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This

The CY7C1018CV33 is available in a standard 300-mil-wide SOJ.

Logic Block Diagram

 

 

 

 

 

 

 

I/O0

 

 

INPUT BUFFER

 

 

A0

 

 

 

 

I/O1

 

 

 

 

 

A1

DECODER

 

 

 

I/O2

A2

 

128K x 8

AMPS

A43

 

I/O3

A

 

 

 

SENSE

 

A5

ROW

 

ARRAY

 

A6

 

 

 

 

I/O4

A7

 

 

 

 

A8

 

 

 

 

I/O5

 

 

 

 

 

 

 

 

COLUMN

POWER

I/O6

 

 

 

 

CE

 

 

DOWN

 

 

 

DECODER

 

 

 

 

 

I/O7

WE

 

 

 

 

OE

9

10

11 12 13 14 15 16

 

 

A A A A A A A A

 

 

 

 

 

Pin Configurations

 

 

SOJ

 

 

Top View

 

A0

1

32

A16

A1

2

31

A15

A2

3

30

A

A3

 

 

14

4

29

A

CE

5

28

13

OE

I/O0

6

27

I/O

 

 

26

7

I/O1

7

I/O6

VCC

8

25

V

VSS

 

24

SS

9

VCC

I/O2

10

23

I/O5

I/O3

11

22

I/O

 

 

4

WE

12

21

A12

A4

13

20

A11

A5

14

19

A10

A6

15

18

A9

A7

16

17

A8

Note:

1.For guidelines on SRAM system designs, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.

Cypress Semiconductor Corporation

198 Champion Court • San Jose, CA 95134-1709

408-943-2600

Document #: 38-05131 Rev. *D

 

Revised August 3, 2006

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Contents Logic Block Diagram FeaturesPin Configurations Functional Description1Selection Guide Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeAC Test Loads and Waveforms4 Switching Characteristics Over the Operating Range5Parameter Description Unit Min Max Read Cycle Write Cycle 9Read Cycle No Switching WaveformsRead Cycle No OE Controlled 12 Write Cycle No CE Controlled14Truth Table 0-I/O Mode PowerWrite Cycle No WE Controlled, OE High During Write14 Write Cycle No WE Controlled, OE LOW10Ordering Information Package DiagramLead 300-mil Molded SOJ Document History Issue Orig. Description of Change DateREV ECN no