Cypress CY7C1020BN manual Truth Table, Ordering Information, Write Cycle No WE Controlled, OE LOW

Page 6

CY7C1020BN

Switching Waveforms (continued)

Write Cycle No. 3 (WE Controlled, OE LOW)

tWC

 

 

ADDRESS

 

 

tSCE

 

 

CE

 

 

tAW

 

tHA

tSA

 

tPWE

 

 

 

WE

 

 

tBW

 

 

BHE, BLE

 

 

tHZWE

t

t

 

SD

HD

DATA I/O

 

 

 

 

tLZWE

Truth Table

CE

OE

WE

BLE

BHE

I/O1–I/O8

I/O9–I/O16

Mode

Power

H

X

X

X

X

High Z

High Z

Power-Down

Standby (ISB)

L

L

H

L

L

Data Out

Data Out

Read – All bits

Active (ICC)

 

 

 

L

H

Data Out

High Z

Read – Lower bits only

Active (ICC)

 

 

 

H

L

High Z

Data Out

Read – Upper bits only

Active (ICC)

L

X

L

L

L

Data In

Data In

Write – All bits

Active (ICC)

 

 

 

L

H

Data In

High Z

Write – Lower bits only

Active (ICC)

 

 

 

H

L

High Z

Data In

Write – Upper bits only

Active (ICC)

L

H

H

X

X

High Z

High Z

Selected, Outputs Disabled

Active (ICC)

L

X

X

H

H

High Z

High Z

Selected, Outputs Disabled

Active (ICC)

Ordering Information

Speed

Ordering Code

Package

Package Type

Operating

(ns)

Diagram

Range

 

 

 

 

 

12

CY7C1020BN-12VC

51-85082

44-Lead (400-Mil) Molded SOJ

Commercial

 

 

 

 

 

 

CY7C1020BN-12VXC

51-85082

44-Lead (400-Mil) Molded SOJ (Pb-free)

Commercial

 

 

 

 

 

 

CY7C1020BN-12ZC

51-85087

44-pin TSOP Type II

Commercial

 

 

 

 

 

 

CY7C1020BN-12ZXC

51-85087

44-pin TSOP Type II (Pb-free)

Commercial

 

 

 

 

 

15

CY7C1020BN-15ZC

51-85087

44-pin TSOP Type II

Commercial

 

 

 

 

 

 

CY7C1020BN-15ZXC

51-85087

44-pin TSOP Type II (Pb-free)

Commercial

 

 

 

 

 

Please contact local sales representative regarding availability of these parts.

Document #: 001-06443 Rev. **

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Contents Functional Description FeaturesLogic Block Diagram Pin Configuration Cypress Semiconductor CorporationMaximum Ratings Electrical Characteristics Over the Operating RangeSelection Guide Capacitance4Switching Characteristics5 Over the Operating Range AC Test Loads and WaveformsWrite Cycle Switching Waveforms Read Cycle NoRead Cycle No OE Controlled 10 Write Cycle No CE Controlled12 Write Cycle No BLE or BHE ControlledOrdering Information 1-I/O 9-I/O Mode PowerTruth Table Write Cycle No WE Controlled, OE LOWPackage Diagrams Lead 400-Mil Molded SOJPin Tsop II Document History Issue Orig. Description of Change Date 426812 See ECNNew Data Sheet Document Title CY7C1020BN 32K x 16 Static RAM Document #

CY7C1020BN specifications

The Cypress CY7C1020BN is a high-performance SRAM (Static Random Access Memory) device that is particularly well-suited for high-speed applications requiring fast access times and low power consumption. This 1 Megabit (1Mbit) SRAM is organized as 128K words by 8 bits, providing a total storage capacity that is ideal for embedded systems, networking equipment, and other devices that demand rapid data processing capabilities.

One of the standout features of the CY7C1020BN is its access time of 10 ns to 15 ns, allowing for swift data read and write operations. This speed is critical in environments where timing is essential, such as telecommunications and computing applications. The device fully supports asynchronous read and write cycles, leading to efficient performance without the need for complex control logic.

The CY7C1020BN utilizes a CMOS (Complementary Metal-Oxide-Semiconductor) technology which contributes to its low power consumption profile. It operates at a voltage of 2.7V to 5.5V, making it versatile for various system designs. The device boasts a low standby current of 1 µA, a significant advantage in battery-operated applications where power savings are crucial.

Additionally, the CY7C1020BN is designed for ease of use, featuring simple interfacing options that allow for seamless integration into existing designs. It operates using standard asynchronous control signals, making it compatible with a wide range of microcontrollers and FPGAs.

In terms of reliability, the CY7C1020BN is built to endure various environmental conditions and has a solid reputation for robust performance over time. Features such as an extended temperature range and guaranteed write endurance enhance its durability in demanding applications.

The package options for the CY7C1020BN include various pin configurations, accommodating different board layouts and space constraints. This flexibility makes it an attractive choice for designers seeking to optimize their space without compromising on performance.

In summary, the Cypress CY7C1020BN is an excellent choice for applications requiring high-speed, low-power static RAM. With its fast access times, low power consumption, versatile voltage range, and compatibility with standard control signals, it continues to be a preferred memory solution in various high-performance systems. Whether in communication devices, industrial equipment, or consumer electronics, it provides reliability and efficiency that engineers can count on.