Cypress CY7C293A, CY7C292A manual CY7C291A

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CY7C291A

 

 

 

 

 

 

 

 

CY7C292A/CY7C293A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics Over the Operating Range[3,4]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7C291A-20

 

7C291A-25

7C291AL-25

 

 

 

 

 

 

 

7C292A-20

 

7C292A-25

7C292AL-25

 

 

 

 

 

 

 

7C293A-20

 

7C293A-25

7C293AL-25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Min.

Max.

 

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = − 4.0 mA

2.4

 

 

2.4

 

2.4

 

V

 

VOL

Output LOW Voltage

VCC = Min., IOL = 16.0 mA

 

0.4

 

 

0.4

 

0.4

V

 

VIH

Input HIGH Voltage

Guaranteed Input Logical

2.0

VCC

 

2.0

VCC

2.0

VCC

V

 

 

 

 

HIGH Voltage for All Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage

Guaranteed Input Logical

 

0.8

 

 

0.8

 

0.8

V

 

 

 

 

LOW Voltage for All Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIX

Input Load Current

GND < VIN < VCC

 

− 10

+10

 

− 10

+10

− 10

+10

∝ A

 

VCD

Input Diode Clamp Voltage

 

 

 

 

 

 

Note 4

 

 

 

 

IOZ

Output Leakage Current

GND < VOUT < VCC,

 

− 10

+10

 

− 10

+10

− 10

+10

∝ A

 

 

 

 

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOS

Output Short Circuit

VCC = Max., VOUT = GND

− 20

− 90

 

− 20

− 90

− 20

− 90

mA

 

 

Current[5]

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating Supply

VCC = Max.,

Com’l

 

120

 

 

90

 

60

mA

 

 

Current

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

Mil

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

Standby Supply Current

VCC = Max.,

Com’l

 

40

 

 

30

 

30

mA

 

 

(7C293A Only)

CS1 = VIH

 

 

 

 

 

 

 

 

 

 

 

Mil

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VPP

Programming Supply Voltage

 

 

12

13

 

12

13

12

13

V

 

IPP

Programming Supply Current

 

 

 

50

 

 

50

 

50

mA

 

VIHP

Input HIGH Programming

 

 

3.0

 

 

3.0

 

3.0

 

V

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VILP

Input LOW Programming

 

 

 

0.4

 

 

0.4

 

0.4

V

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

 

 

 

 

 

 

 

 

 

 

 

 

 

3.See the last page of this specification for Group A subgroup testing information.

4.See the “Introduction to CMOS PROMs” section of the Cypress Data Book for general information on testing.

5.For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.

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Contents Features Logic Block DiagramFunctional Description Selection Guide Maximum RatingsOperating Range CY7C291A Parameter Description Test Conditions Max Unit Capacitance4AC Test Loads and Waveforms4 Switching Characteristics Over the Operating Range3Programming Information Erasure CharacteristicsProgramming Pinouts Typical DC and AC CharacteristicsOrdering Information9 SpeedOrdering Code Package Package Type Operating Package Type Operating Ordering CodeCY7C291AL-50JC CY7C293A-30DMB DC Characteristics Switching CharacteristicsSMD Cross Reference Package Diagrams Lead 600-Mil CerDIP D12 Square Leadless ChipCarrier L64Lead 300-Mil CerDIP D14 Lead 600-Mil Molded DIP P11 Lead 300-Mil Molded DIP P13/P13A Lead 300-Mil Molded Soic S13 Pin Windowed Leadless Chip Carrier Q64Lead Windowed Cerpack T73 Lead 300-Mil Windowed CerDIP W14

CY7C291A, CY7C292A, CY7C293A specifications

The Cypress CY7C293A, CY7C292A, and CY7C291A are high-performance static random-access memory (SRAM) devices designed for various applications requiring fast access and low power consumption. These memory chips are particularly suitable for use in telecommunications, networking, industrial, automotive, and consumer electronics.

One key feature of the CY7C293A model is its 2 megabit capacity, which offers a vast storage solution for applications needing quick read and write capabilities. The CY7C292A and CY7C291A, on the other hand, provide 1 megabit and 256 kilobits, respectively, catering to a range of memory needs. The devices utilize a 16-bit organization, optimally balancing capacity and access speed.

A standout technology is the use of a fast access time, with the CY7C293A achieving speeds of up to 12 nanoseconds. This rapid access capability significantly enhances the performance of systems that depend on swift data retrieval. The SRAM devices are built using Cypress’s unique CMOS technology, which not only supports a dense manufacturing process but also ensures low power consumption. The standby current is minimal, making these chips suitable for battery-powered applications where energy efficiency is critical.

The packaging options available for the CY7C293A, CY7C292A, and CY7C291A include various forms such as 28-pin DIP and 32-pin TSOP, allowing for ease of integration into different circuit layouts. The devices feature an asynchronous operation, providing straightforward interfacing with no need for external clocks, which simplifies system design.

In terms of reliability, these SRAMs are equipped with robust features that ensure data integrity and stability. They offer a wide operating voltage range, typically from 4.5V to 5.5V, accommodating different power supply configurations. Furthermore, the chips are designed to withstand multiple read/write cycles, making them ideal for applications that demand frequent data manipulation.

Overall, the Cypress CY7C293A, CY7C292A, and CY7C291A SRAM devices represent a versatile memory solution that combines speed, efficiency, and reliability, making them a favored choice for engineers and designers working across various technological domains. Their adaptability to different applications ensures that they remain relevant in the rapidly evolving landscape of electronics and memory technology.
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