Cypress CY62167DV18 Thermal Resistance, AC Test Loads and Waveforms, Data Retention Waveform9

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CY62167DV18 MoBL→

Thermal Resistance [7]

Parameter

Description

Test Conditions

VFBGA

Unit

ΘJA

Thermal Resistance

Still Air, soldered on a 3 × 4.5 inch,

55

°C/W

 

(Junction to Ambient)

two-layer printed circuit board

 

 

ΘJC

Thermal Resistance

 

16

°C/W

 

(Junction to Case)

 

 

 

AC Test Loads and Waveforms

VCC

OUTPUT

R1

VCC

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

90%

 

10%

 

 

 

 

10%

GND

 

 

 

 

 

 

 

 

 

 

 

30 pF

INCLUDING

JIG AND

SCOPE

R2

Rise Time = 1 V/ns

Fall Time = 1 V/ns

 

Equivalent to:

THEVENIN EQUIVALENT

OUTPUT

 

RTH

V

 

 

 

Parameters

1.8V

Unit

R1

13500

Ω

 

 

 

R2

10800

Ω

 

 

 

RTH

6000

Ω

VTH

0.80

V

Data Retention Characteristics (Over the Operating Range)

 

Parameter

Description

 

 

 

Conditions

 

 

Min

Typ [2]

Max

Unit

VDR

VCC for Data Retention

 

 

 

 

 

 

 

 

1.0

 

1.95

V

I

 

Data Retention Current

VCC= 1.0V,

 

 

> V

 

– 0.2V, CE

 

< 0.2V,

 

 

 

10

∝A

CCDR

CE

1

CC

2

 

 

 

 

VIN > VCC – 0.2V or VIN < 0.2V

 

 

 

 

 

 

 

tCDR[7]

Chip Deselect to Data Retention Time

 

 

 

 

 

 

 

 

 

0

 

 

ns

t

[8]

Operation Recovery Time

 

 

 

 

 

 

 

 

t

RC

 

 

ns

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Retention Waveform[9]

VCC

CE1 or

BHE,BLE or CE2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DATA RETENTION MODE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC, min

 

 

 

 

 

 

 

 

 

 

VCC, min

 

 

 

 

 

 

VDR > 1.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDR

 

 

 

 

 

 

 

 

 

 

 

 

 

tR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

8.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 ∝s or stable at VCC(min) > 100 ∝s.

9.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.

Document #: 38-05326 Rev. *C

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Configuration Product PortfolioDC Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range CapacitanceData Retention Characteristics Over the Operating Range Thermal ResistanceAC Test Loads and Waveforms Data Retention Waveform9Parameter Description 55 ns Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Switching Waveforms Read Cycle 1 Address Transition Controlled14Write Cycle 1 WE Controlled13, 17 Write Cycle 2 CE1 or CE2 Controlled13, 17Write Cycle 3 WE Controlled, OE LOW18 Write Cycle 4 BHE/BLE Controlled, OE LOW18Inputs/Outputs Mode Power Truth TableOrdering Information BHE BLEPackage Diagrams Ball Vfbga 8 x 9.5 x 1 mmDocument History Issue Date Orig. Description of ChangeREV ECN no

CY62167DV18 specifications

The Cypress CY62167DV18 is a high-performance, low-power static RAM (SRAM) device designed for a variety of applications where speed and efficiency are critical. This memory chip is especially notable for its compact footprint and advanced features, making it ideal for use in portable electronics, consumer products, telecommunications, and networking equipment.

One of the main features of the CY62167DV18 is its access time of 10 nanoseconds, allowing for rapid data retrieval and processing. With a data width of 16 bits, the device provides significant data bandwidth, which is essential for modern applications requiring fast processing capabilities. It operates on a power supply voltage of 1.8V, thereby ensuring low power consumption, which is a crucial factor in battery-operated devices.

The CY62167DV18 employs Cypress’s advanced SRAM technology, which improves speed while reducing latency. This SRAM is fabricated using a highly reliable process technology that enhances durability and performance. Additionally, the chip's static nature eliminates the need for refresh cycles, contributing to quick access times and more straightforward system designs compared to dynamic RAM (DRAM).

Another characteristic of the CY62167DV18 is its compatibility with various memory bus standards, including the popular 32-bit asynchronous interface. This adaptability allows the chip to easily integrate into existing designs without requiring major modifications. Furthermore, the device supports a wide temperature range, making it suitable for both consumer and industrial applications.

The CY62167DV18 comes with built-in features such as a chip enable input (CE), write enable input (WE), and output enable input (OE). These functionalities streamline control and management of memory access, enabling engineers to design efficient and reliable systems. The chip is available in a compact 48-ball BGA (Ball Grid Array) package, which saves space on printed circuit boards and enhances thermal performance.

In summary, the Cypress CY62167DV18 is a robust, high-speed SRAM solution that combines advanced technology with low power consumption. Its impressive access times, low-voltage operation, compatibility with multiple standards, and compact design make it a versatile choice for a broad range of applications, from consumer electronics to sophisticated industrial systems. As the demand for faster and more efficient memory solutions continues to grow, the CY62167DV18 stands out as a reliable option for developers seeking to enhance their product performance.
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