Cypress CY62148EV30 manual Features, Functional Description, Logic Block Diagram

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MoBL® CY62148EV30

4-Mbit (512K x 8) Static RAM

Features

■Very high speed: 45 ns

❐Wide voltage range: 2.20V to 3.60V

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive-A: –40°C to +85°C

■Pin compatible with CY62148DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 7 μA (Industrial)

■Ultra low active power

❐Typical active current: 2 mA at f = 1 MHz

■Easy memory expansion with CE, and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Available in Pb-free 36-ball VFBGA, 32-pin TSOP II and 32-pin SOIC [1] packages

Functional Description

The CY62148EV30[2] is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL→) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW).

To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A18).

To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

Logic Block Diagram

A0

 

INPUT BUFFER

 

 

IO0

A1

 

 

 

 

 

 

 

 

A2

 

 

 

 

 

 

 

IO1

A3

DECODER

 

512K x 8

 

 

AMPS

A6

 

 

 

IO3

A4

 

 

 

 

 

 

 

IO2

A5

 

 

 

 

 

 

 

 

A7

ROW

 

 

 

 

 

SENSE

 

A8

 

ARRAY

 

 

IO4

A9

 

 

 

 

 

 

 

 

A10

 

 

 

 

 

 

 

IO5

A11

 

 

 

 

 

 

 

 

A12

 

 

 

 

 

 

 

IO6

CE

COLUMN DECODER

POWER

IO7

WE

 

 

 

 

 

 

DOWN

 

OE

13

14

15

16

17

18

 

 

 

 

 

 

A

A

A

A

A

A

 

 

Notes

1.SOIC package is available only in 55 ns speed bin.

2.For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation • 198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05576 Rev. *G

 

 

Revised August 4, 2008

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Contents Logic Block Diagram FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtProduct Portfolio Pin Configuration 1Vfbga TsopMaximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Product Range AmbientThermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention WaveformParameter Description Ind’l/Auto-A Unit Min Switching CharacteristicsRead Cycle Write CycleSwitching Waveforms Truth Table Inputs/Outputs Mode PowerOrdering Information Package DiagramsPin Tsop II Pin 450 MIL Molded Soic ECN Document HistorySubmission Orig. Description of Change Date Document Title CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Sales, Solutions, and Legal InformationDocument Number Revision USB

CY62148EV30 specifications

Cypress CY62148EV30 is a high-performance static random-access memory (SRAM) module renowned for its speed, low power consumption, and versatile applications in various electronic systems. With a storage capacity of 2 megabits (256K x 8 bits), this SRAM is ideal for developers seeking reliable memory solutions for high-speed computing tasks.

One of the standout features of the CY62148EV30 is its fast access time, which can be as low as 30 nanoseconds, allowing for rapid data retrieval and storage. This makes it particularly well-suited for applications that require quick response times, such as embedded systems, telecommunications, and automotive electronics.

The CY62148EV30 is built using advanced CMOS technology, resulting in a low standby current that significantly prolongs battery life in portable devices. This characteristic is crucial for mobile applications where power efficiency is paramount. The SRAM operates on a wide voltage range, typically between 2.7V and 3.6V, accommodating various system designs and enhancing compatibility with different voltage levels prevalent in modern electronics.

The device features a simple asynchronous interface with straightforward read and write operations. Its dual-port capability enables simultaneous access by multiple devices, enhancing performance in multi-processor or multi-user environments. This is particularly beneficial in networking applications where high-speed data exchange is essential.

Furthermore, the CY62148EV30 is designed with high reliability in mind. It includes built-in features such as data retention voltage, which ensures that data is preserved even in low power scenarios. Additionally, the device supports a wide temperature range, making it capable of functioning effectively in diverse environmental conditions.

The versatility of the CY62148EV30 extends to various applications, including cache memory for microcontrollers, buffers in communication systems, and data storage in digital signal processing environments. Its robust characteristics and performance capabilities make it a preferred choice for engineers seeking a high-quality, reliable SRAM solution.

In summary, the Cypress CY62148EV30 is an exemplary SRAM offering that combines high speed, low power consumption, and versatile application compatibility. With its advanced technology, fast access times, low standby current, and reliability features, it stands out as a key component in a myriad of modern electronic systems.
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