Cypress CY62148EV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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MoBL® CY62148EV30

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

55°C to +125°C

Supply Voltage to Ground

 

 

Potential

–0.3V to VCC(max) + 0.3V

DC Voltage Applied to Outputs

 

 

in High-Z State [5, 6]

–0.3V to V

+ 0.3V

 

CC(max)

 

Electrical Characteristics (Over the Operating Range)

DC Input Voltage [5, 6]

–0.3V to V

 

+ 0.3V

 

 

 

CC(max)

 

 

Output Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

> 2001V

(MIL-STD-883, Method 3015)

 

 

 

 

Latch up Current

.....................................................

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

 

Product

 

Range

Ambient

VCC

[7]

 

Temperature

 

CY62148EV30

 

Ind’l/Auto-A

–40°C to +85°C

2.2V to 3.6V

 

 

 

 

 

 

 

Parameter

Description

 

 

 

 

Test Conditions

- 45 (Ind’l/Auto-A)

- 55

[1]

Unit

 

 

 

 

Min

Typ[4]

Max

Min

Typ[4]

Max

 

 

 

 

 

 

 

 

 

VOH

Output HIGH

 

IOH = –0.1 mA

 

2.0

 

 

2.0

 

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

2.4

 

 

V

 

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 0.1 mA

 

 

 

0.4

 

 

0.2

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

0.4

 

 

0.4

V

 

 

 

 

 

 

 

VIH

Input HIGH

 

VCC = 2.2V to 2.7V

 

1.8

 

VCC + 0.3V

1.8

 

VCC + 0.3V

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC= 2.7V to 3.6V

 

2.2

 

VCC + 0.3V

2.2

 

VCC + 0.3V

V

 

 

 

 

 

 

VIL

Input LOW

 

VCC = 2.2V to 2.7V

For VFBGA and

–0.3

 

0.6

 

 

 

V

 

Voltage

 

 

 

 

 

TSOP II package

 

 

 

 

 

 

 

 

 

 

 

 

 

 

For SOIC package

 

 

 

–0.3

 

0.4 [8]

V

 

 

 

VCC = 2.7V to 3.6V

For VFBGA and

–0.3

 

0.8

 

 

 

V

 

 

 

 

 

 

 

TSOP II package

 

 

 

 

 

 

 

 

 

 

 

 

 

 

For SOIC package

 

 

 

–0.3

 

0.6 [8]

 

IIX

Input Leakage

 

GND < VI < VCC

 

–1

 

+1

–1

 

+1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–1

 

+1

–1

 

+1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fmax = 1/tRC

VCC = VCC(max),

 

15

20

 

15

20

mA

 

Supply Current

 

 

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

2

2.5

 

2

2.5

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

 

 

ISB1

Automatic CE

 

 

> VCC

– 0.2V,

 

 

1

7

 

1

7

μA

CE

 

 

Power Down

 

VIN > VCC

– 0.2V, VIN < 0.2V

 

 

 

 

 

 

 

 

Current — CMOS

 

f = fmax

(Address and Data Only),

 

 

 

 

 

 

 

 

Inputs

 

f = 0 (OE and WE), VCC = 3.60V

 

 

 

 

 

 

 

ISB2 [9]

Automatic CE

 

 

> VCC

– 0.2V,

 

 

1

7

 

1

7

μA

CE

 

 

Power Down

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

Current — CMOS

 

f = 0, VCC

= 3.60V

 

 

 

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7.Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

8.Under DC conditions the device meets a VIL of 0.8V (for VCC range of 2.7V to 3.6V) and 0.6V (for VCC range of 2.2V to 2.7V). However, in dynamic conditions Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. This is applicable to SOIC package only. Please refer to AN13470 for details.

9.Only chip enable (CE) must be HIGH at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

Document #: 38-05576 Rev. *G

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesLogic Block Diagram Functional DescriptionTsop Pin Configuration 1Product Portfolio VfbgaProduct Range Ambient Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeData Retention Waveform Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsWrite Cycle Switching CharacteristicsParameter Description Ind’l/Auto-A Unit Min Read CycleSwitching Waveforms Truth Table Inputs/Outputs Mode PowerOrdering Information Package DiagramsPin Tsop II Pin 450 MIL Molded Soic Document History ECNSubmission Orig. Description of Change Date USB Sales, Solutions, and Legal InformationDocument Title CY62148EV30 MoBL 4-Mbit 512K x 8 Static RAM Document Number Revision

CY62148EV30 specifications

Cypress CY62148EV30 is a high-performance static random-access memory (SRAM) module renowned for its speed, low power consumption, and versatile applications in various electronic systems. With a storage capacity of 2 megabits (256K x 8 bits), this SRAM is ideal for developers seeking reliable memory solutions for high-speed computing tasks.

One of the standout features of the CY62148EV30 is its fast access time, which can be as low as 30 nanoseconds, allowing for rapid data retrieval and storage. This makes it particularly well-suited for applications that require quick response times, such as embedded systems, telecommunications, and automotive electronics.

The CY62148EV30 is built using advanced CMOS technology, resulting in a low standby current that significantly prolongs battery life in portable devices. This characteristic is crucial for mobile applications where power efficiency is paramount. The SRAM operates on a wide voltage range, typically between 2.7V and 3.6V, accommodating various system designs and enhancing compatibility with different voltage levels prevalent in modern electronics.

The device features a simple asynchronous interface with straightforward read and write operations. Its dual-port capability enables simultaneous access by multiple devices, enhancing performance in multi-processor or multi-user environments. This is particularly beneficial in networking applications where high-speed data exchange is essential.

Furthermore, the CY62148EV30 is designed with high reliability in mind. It includes built-in features such as data retention voltage, which ensures that data is preserved even in low power scenarios. Additionally, the device supports a wide temperature range, making it capable of functioning effectively in diverse environmental conditions.

The versatility of the CY62148EV30 extends to various applications, including cache memory for microcontrollers, buffers in communication systems, and data storage in digital signal processing environments. Its robust characteristics and performance capabilities make it a preferred choice for engineers seeking a high-quality, reliable SRAM solution.

In summary, the Cypress CY62148EV30 is an exemplary SRAM offering that combines high speed, low power consumption, and versatile application compatibility. With its advanced technology, fast access times, low standby current, and reliability features, it stands out as a key component in a myriad of modern electronic systems.