Comparison between CY14B256L and
AN20639
Author: Shivendra Singh
Associated Project: No
Associated Part Family: CY14B256L and
Associated Application Notes: None
Application Note Abstract
This application note compares the CY14B256L (0.25 μm) and the
Introduction
CY14B256L and
The specifications in the data sheets of CY14B256L (0.25 μm) and
Table 1. Comparison Table
Most applications use autostore and autorecall features of nvSRAM. To simplify the comparison, all electrical parame- ters which may affect the application performance directly or indirectly are considered. Designers must consider these dif- ferences, and if necessary do appropriate changes in their design.
Only those specifications that differ between CY14B256L (0.25 μm) and
Specification | CY14B256L (35 nsec) |
| ||
Endurance |
| 200,000 cycles |
| 1,000,000 cycles |
|
|
|
|
|
Retention |
| 20 year |
| 100 year |
|
|
|
|
|
DC Electrical Characteristics |
|
|
|
|
Vcc
Icc1
Icc3
Icc4
VIH
Vcap [1]
Cin
2.7V min | 3.6V max | 3.0V min | 3.6V max |
| 55 mA max |
| 52 mA max |
| 10 mA max |
| 9 mA max |
| 3 mA max |
| 2 mA max |
2.0V min | Vcc + 0.3V max | 2.2V min | Vcc + 0.5V max |
17 µF min | 120 µF max | 68 µF min | 220 µF max |
| 7 pF max |
| 5 pF max |
|
|
|
|
AC Switching Characteristics
tOHA
tLZCE
tLZWE
3 ns min |
| 5 ns min |
3 ns min |
| 5 ns min |
3 ns min |
| 5 ns min |
|
|
|
Note
1.
November 11, 2008 | Document No. | 1 |
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