MS-7379 Mainboard
Configuration DRAM Timing by SPD
Setting to [Enabled] enables DRAM CAS# Latency automatically to be determined by BIOS based on the configurations on the SPD (Serial Presence Detect) EEPROM on the DRAM module.
DRAM CAS# Latency
When the Configuration DRAM Timing by SPD sets to [Disabled], the field is adjustable.This controls the CAS latency, which determines the timing delay (in clock cycles) before SDRAM starts a read command after receiving it.
DRAM RAS# to CAS# Delay
When the Configuration DRAM Timing by SPD sets to [Disabled], the field is adjustable. When DRAM is refreshed, both rows and columns are addressed separately. This setup item allows you to determine the timing of the transition from RAS (row address strobe) to CAS (column address strobe). The less the clock cycles, the faster the DRAM performance.
DRAM RAS# Precharge
When the Configuration DRAM Timing by SPD sets to [Disabled], this field is adjustable. This setting controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refresh may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system.
DRAM RAS# Activate to Precharge
When the Configuration DRAM Timing by SPD sets to [Disabled], this field is adjustable. This item controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refresh may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system.
DRAM TRFC
When the Configuration DRAM Timing by SPD sets to [Disabled], the field is adjustable. This setting determines the time RFC takes to read from and write to a memory cell.