Cypress CY24713 manual Absolute Maximum Conditions, Pullable Crystal Specifications

CY24713

Absolute Maximum Conditions

Parameter	Description	Min	Max	Unit
VDD	Supply Voltage	–0.5	7.0	V
T	Storage Temperature[2]	–65	125	°C
S
TJ	Junction Temperature	–	125	°C
	Digital Inputs	VSS – 0.3	VDD + 0.3	V
	Digital Outputs referred to VDD	VSS – 0.3	VDD + 0.3	V
	Electrostatic Discharge	–	2000	V
	Analog Input	–0.5	7.0	V
Pullable Crystal Specifications

Parameter	Description	Condition	Min	Typ.	Max	Unit
FNOM	Nominal crystal frequency	Parallel resonance, funda-	–	27	–	MHz
		mental mode, AT cut
CLNOM	Nominal load capacitance		–	14	–	pF
R1	Equivalent series resistance (ESR)	Fundamental mode	–	–	25	Ω
R3/R1	Ratio of third overtone mode ESR to fundamen-	Ratio used because typical R1	3	–	–
	tal mode ESR	values are much less than the
		maximum spec.
DL	Crystal drive level	No external series resistor as-	–	0.5	2.0	mW
		sumed
F3SEPHI	Third overtone separation from 3*FNOM	High side	300	–	–	ppm
F3SEPLO	Third overtone separation from 3*FNOM	Low side	–	–	–150	ppm
C0	Crystal shunt capacitance		–	–	7	pF
C0/C1	Ratio of shunt to motional capacitance		180	–	250
C1	Crystal motional capacitance		14.4	18	21.6	pF

Recommended Operating Conditions

Parameter	Description	Min	Typ.	Max	Unit
VDD	Operating Voltage	3.135	3.3	3.465	V
TA	Ambient Temperature	0	–	70	°C
CLOAD	Max. Load Capacitance	–	–	15	pF
tPU	Power up time for all VDDs to reach minimum specified voltage (power	0.05	–	500	ms
	ramps must be monotonic)
DC Electrical Characteristics

Parameter	Description	Conditions	Min	Typ.	Max	Unit
IOH	Output High Current	VOH = VDD – 0.5, VDD = 3.3V	12	24	–	mA
IOL	Output Low Current	VOL = 0.5, VDD = 3.3V	12	24	–	mA
CIN	Input Capacitance		–	–	7	pF
IIZ	Input Leakage Current		–	5	–	μA
fΔXO	VCXO pullability range		±150	–	–	ppm
VVCXO	VCXO input range		0	–	VDD	V
IVDD	Supply Current		–	25	30	mA

Note

2. Rated for 10 years

Document #: 38-07396 Rev. *A Page 2 of 5

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