CY7C1020BN

 

 

 

 

 

 

 

 

 

Selection Guide

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7C1020BN-12

7C1020BN-15

 

Maximum Access Time (ns)

12

15

 

 

 

 

 

Maximum Operating Current (mA)

140

130

 

 

 

 

 

Maximum CMOS Standby Current (mA)

 

3

3

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.5

0.5

 

 

 

 

 

 

 

 

 

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V

DC Voltage Applied to Outputs

 

 

 

in High Z State[1]

–0.5V to V

CC

+0.5V

DC Input Voltage[1]

 

 

–0.5V to V

CC

+0.5V

 

 

 

Electrical Characteristics Over the Operating Range

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

>2001V

(per MIL-STD-883, Method 3015)

 

Latch-Up Current

>200 mA

Operating Range

 

Ambient [2]

VCC

Range

Temperature

Commercial

0×C to +70×C

5V ± 10%

 

 

 

Industrial

–40×C to +85×C

5V ± 10%

 

 

 

 

 

 

 

 

 

 

 

Test

 

7C1020BN-12

7C1020BN-15

 

Parameter

Description

 

 

 

 

Conditions

 

Min.

Max.

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –4.0 mA

 

2.4

 

2.4

 

V

VOL

Output LOW Voltage

VCC = Min., IOL = 8.0 mA

 

 

0.4

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

2.2

6.0

2.2

6.0

V

VIL

Input LOW Voltage[1]

 

 

 

 

 

 

 

 

 

 

 

–0.5

0.8

–0.5

0.8

V

IIX

Input Load Current

GND < VI < VCC

 

 

 

 

–1

+1

–1

+1

A

IOZ

Output Leakage Current

GND < VI < VCC, Output Disabled

 

–1

+1

–1

+1

A

I

Output Short Circuit Current[3]

V

CC

= Max., V

OUT

= GND

 

 

–300

 

–300

mA

OS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating Supply Current

VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC

 

140

 

130

mA

ISB1

Automatic CE Power-Down

Max. V

,

 

> V

 

 

 

 

 

 

 

 

 

CE

IH

 

 

 

20

 

20

mA

 

Current—TTL Inputs

 

 

CC

 

 

 

 

 

 

 

 

 

VIN > VIH or VIN < VIL, f = fMAX

 

 

 

 

 

 

ISB2

Automatic CE Power-Down

Max. V

,

CE

> V

CC

– 0.3V,

 

 

3

 

3

mA

 

Current—CMOS Inputs

 

 

CC

 

 

 

 

 

 

 

 

 

 

 

 

VIN > VCC – 0.3V, or VIN < 0.3V,

 

 

 

 

 

 

 

L

 

0.5

 

0.5

mA

 

 

f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance[4]

Parameter

Description

Test Conditions

Max.

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

8

pF

 

 

VCC = 5.0V

 

 

COUT

Output Capacitance

 

8

pF

Notes:

1.VIL (min.) = –2.0V for pulse durations of less than 20 ns.

2.TA is the case temperature.

3.Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

4.Tested initially and after any design or process changes that may affect these parameters.

Document #: 001-06443 Rev. **

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Cypress CY7C1020BN Selection Guide, Maximum Ratings, Electrical Characteristics Over the Operating Range, Capacitance4

CY7C1020BN specifications

The Cypress CY7C1020BN is a high-performance SRAM (Static Random Access Memory) device that is particularly well-suited for high-speed applications requiring fast access times and low power consumption. This 1 Megabit (1Mbit) SRAM is organized as 128K words by 8 bits, providing a total storage capacity that is ideal for embedded systems, networking equipment, and other devices that demand rapid data processing capabilities.

One of the standout features of the CY7C1020BN is its access time of 10 ns to 15 ns, allowing for swift data read and write operations. This speed is critical in environments where timing is essential, such as telecommunications and computing applications. The device fully supports asynchronous read and write cycles, leading to efficient performance without the need for complex control logic.

The CY7C1020BN utilizes a CMOS (Complementary Metal-Oxide-Semiconductor) technology which contributes to its low power consumption profile. It operates at a voltage of 2.7V to 5.5V, making it versatile for various system designs. The device boasts a low standby current of 1 µA, a significant advantage in battery-operated applications where power savings are crucial.

Additionally, the CY7C1020BN is designed for ease of use, featuring simple interfacing options that allow for seamless integration into existing designs. It operates using standard asynchronous control signals, making it compatible with a wide range of microcontrollers and FPGAs.

In terms of reliability, the CY7C1020BN is built to endure various environmental conditions and has a solid reputation for robust performance over time. Features such as an extended temperature range and guaranteed write endurance enhance its durability in demanding applications.

The package options for the CY7C1020BN include various pin configurations, accommodating different board layouts and space constraints. This flexibility makes it an attractive choice for designers seeking to optimize their space without compromising on performance.

In summary, the Cypress CY7C1020BN is an excellent choice for applications requiring high-speed, low-power static RAM. With its fast access times, low power consumption, versatile voltage range, and compatibility with standard control signals, it continues to be a preferred memory solution in various high-performance systems. Whether in communication devices, industrial equipment, or consumer electronics, it provides reliability and efficiency that engineers can count on.