CYV15G0100EQ

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential

–0.5V to +3.8V

DC Voltage Applied to Outputs

 

in High Z State

–0.5V to VCC + 0.5V

DC Input Voltage

–0.5V to VCC+0.5V

Electro Static Discharge (ESD) HBM

> 2000 V

(JEDEC EIA/JESD-A114A)

 

Latch Up Current

> 200 mA

DC Electrical Characteristics

Power Up Requirements

The CYV15G0100EQ contains one power supply. The voltage on any input or IO pin must not exceed the power pin during power up.

Operating Range

Range

Ambient

VCC

Temperature

Commercial

0°C to +70°C

+3.3V ±5%

 

 

 

 

Parameter

 

 

Description

Test Conditions

Min

 

 

Typ

Max

Unit

VCC

 

Supply Voltage[1]

–

3.135

 

 

3.3

3.465

V

PD

 

Power Consumption[2]

–

125

 

 

160

190

mW

I

 

 

 

Supply Current[1]

–

38

 

 

48

60

mA

S

 

 

 

 

 

 

 

 

 

 

V

CMOUT

 

Output Common Mode Voltage[1]

Load = 50Ω

–

V

CC

– ΔV /2

–

V

 

 

 

 

 

 

 

SDO

 

 

 

 

 

 

 

 

 

 

 

 

= 2.9

 

 

VCMIN

 

Input Common Mode Voltage[1]

–

1

 

 

 

1.4

V

 

 

 

 

(Bypass = High)

 

 

 

 

 

 

 

 

 

 

 

Input Common Mode Voltage[1]

–

0

 

 

 

2.9

V

 

 

 

 

(Bypass = Low)

 

 

 

 

 

 

 

–

 

 

 

CLI DC Voltage (0m)[1]

–

2.2

 

 

2.65

2.95

V

–

 

 

 

CLI DC Voltage (No Signal)[1]

–

1.5

 

 

1.9

2.3

V

–

 

 

 

Floating MCLADJ DC Voltage[1]

–

 

 

 

1.3

 

V

–

 

 

 

MCLADJ Range[3]

–

0.4

 

 

0.72

1.02

V

V

 

 

 

 

 

Carrier Not Present

2.8

 

 

–

–

V

 

CD/MUTE(OH)

 

CD/MUTE Output Voltage[1]

 

 

 

 

 

V

 

CD/MUTE(OL)

 

 

 

Carrier Present

–

 

 

–

0.8

V

 

 

 

 

 

V

 

 

 

 

 

Min to Mute

2.5

 

 

–

–

V

 

 

 

CD/MUTE Input Voltage Required to

 

 

CD/MUTE

 

 

 

 

 

 

 

Force Outputs to Mute[1]

 

 

 

 

 

 

 

V

 

 

 

 

 

Max to Activate

–

 

 

–

1

V

 

 

 

CD/MUTE Input Voltage Required to

 

 

CD/MUTE

 

 

 

 

 

 

 

Force Active[1]

 

 

 

 

 

 

 

Notes

1.Production test.

2.Calculated results from production test.

3.Not tested. Based on characterization.

Document Number: 001-12520 Rev. **

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Cypress CYV15G0100EQ manual Maximum Ratings, DC Electrical Characteristics, Operating Range
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CYV15G0100EQ specifications

The Cypress CYV15G0100EQ is a high-performance, low-power memory solution designed for a variety of applications. As part of the Cypress family of products, this particular memory component offers several advanced features and technologies that enhance its functionality and efficiency.

One of the standout characteristics of the CYV15G0100EQ is its capacity. With a density of 1 Gbit, it provides ample space for data storage, making it suitable for applications ranging from consumer electronics to automotive systems. Its NAND Flash memory technology ensures high data integrity and reliability, which is crucial in today's data-driven world.

The CYV15G0100EQ also supports high-speed operation, enabling rapid read and write cycles. This feature is particularly beneficial for applications that require quick data processing, such as multimedia applications, gaming devices, and high-speed networking equipment. The device's performance is further enhanced by its low latency, which minimizes the delay in data access, thereby improving overall system responsiveness.

In terms of power consumption, the CYV15G0100EQ is designed to operate efficiently. It features a low standby current and a reduced active power requirement, making it an ideal choice for battery-powered and energy-sensitive applications. This low-power characteristic not only extends battery life but also contributes to reduced heat generation, which is an essential factor for maintaining system reliability.

The device incorporates advanced error correction technology to ensure data accuracy and reliability. This includes mechanisms for detecting and correcting bit errors, which is vital for applications where data integrity is critical. Coupled with robust wear-leveling algorithms, the CYV15G0100EQ is designed for endurance, ensuring long-lasting performance in high-write environments.

Another important aspect of the CYV15G0100EQ is its compatibility with various interfaces. It supports standard communication protocols, making it easy to integrate with a wide range of microcontrollers and processors. This flexibility allows designers to utilize the memory component in diverse applications without worrying about compatibility issues.

Additionally, the CYV15G0100EQ offers a compact form factor, enabling designers to save board space while still achieving high performance. This is particularly advantageous in applications where size constraints are a primary concern, such as in portable devices and wearable technology.

Overall, the Cypress CYV15G0100EQ represents a cutting-edge solution for memory needs, combining high capacity, speed, low power consumption, and exceptional reliability. Its advanced features make it a preferred choice among engineers and manufacturers looking to optimize performance in their next-generation designs. Whether in consumer electronics, automotive applications, or industrial systems, the CYV15G0100EQ delivers exceptional value and performance for a variety of demanding applications.
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