Delta Electronics Technical Specifications, Parameter, NOTES and CONDITIONS, Q48DC12003NR A

TECHNICAL SPECIFICATIONS

(TA=25°C, airflow rate=300 LFM, Vin=48Vdc, nominal Vout unless otherwise noted.)

PARAMETER	NOTES and CONDITIONS				Q48DC12003NR A
				Min.			Typ.		Max.		Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Continuous								80			Vdc
Transient	100ms								100		Vdc
Operating Temperature	Refer to Figure 20 for measuring point			-40				124			°C
Storage Temperature				-55				125			°C
Input/Output Isolation Voltage								2250			Vdc
INPUT CHARACTERISTICS
Operating Input Voltage				36		48		75			Vdc
Input Under-Voltage Lockout
Turn-On Voltage Threshold				32		33.5		35			Vdc
Turn-Off Voltage Threshold				29		30.5		32			Vdc
Lockout Hysteresis Voltage				2			3		4		Vdc
Maximum Input Current	100% Load, 36Vin							2.4			A
No-Load Input Current						50					mA
Off Converter Input Current								10			mA
Inrush Current(I2t)								1			A2s
Input Reflected-Ripple Current	P-P thru 12µH inductor, 5Hz to 20MHz							20			mA
Input Voltage Ripple Rejection	120Hz						66				dB
OUTPUT CHARACTERISTICS
Output Voltage Set Point	Vin=48V, lo=lo. Max, Tc=25℃	Vout 1,2		±11.98		±12.10		±12.22			V
Output Voltage Regulation
Over Load	lo1=lo2=lo, min to lo, max	Vout 1,2				±20		±180			mV
Over Line	Vin=36V to 75V,Io1=Io2=full load	Vout 1,2				±20		±120			mV
Cross Regulation	Io1-Io2 <20% Io,max								±360		mV
Over Temperature	Tc=-40℃to 129℃, Io1=Io2= Io, min to Io, max					±120					mV
Total Output Voltage Range	Over all load, line and temperature			±11.74				±12.46			V
Output Voltage Ripple and Noise	5Hz to 20MHz bandwidth		2
Peak-to-Peak	Io1, Io2 Full Load, 1µF ceramic, 10µFtantalum	Vout 1,					40		80		mV
RMS	Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum	Vout 1,	2			10		30			mV
Operating Output Current Range		Vout 1,	2	0					2.7		A
Output DC Current-Limit Inception	Iout 1＋ lout 2			7.1				9			A
DYNAMIC CHARACTERISTICS
Output Voltage Current Transient	48V, 10µF Tan & 1µF Ceramic load cap, 0.1A/µs
Positive Step Change in Output Current	Iout1 or Iout2 from50% Io, max	Vout 1				400		600			mV
	to 75% Io, max	Vout 2				400		600
Negative Step Change in Output Current	Iout2 or Iout1 from 75% Io,max	Vout 1					400		600		mV
	to 50% Io, max	Vout 2					400		600
Cross dynamic						±120		±360			mV
Settling Time (within 1% Vout nominal)							100				us
Turn-On Transient
Delay Time, From On/Off Control						2					ms
Delay Time, From Input						2					ms
Start-up Time, From On/Off Control						20		30			ms
Start-up Time, From Input						20		30			ms
Maximum Output Capacitance	Full load; 5% overshoot of Vout at startup							5000			µF
EFFICIENCY
100% Load	Iout1, Iout2 full load					88				%
60% Load	Iout1, Iout2 60% of full load					86.5				%
ISOLATION CHARACTERISTICS
Input to Output	<1 minute							2250			Vdc
Isolation Resistance				10							MΩ
Isolation Capacitance							1500				pF
FEATURE CHARACTERISTICS
Switching Frequency						330					kHz
ON/OFF Control, (Logic Low-Module ON)
Logic Low	Von/off at Ion/off=1.0mA			-0.7				1.8			V
Logic High	Von/off at Ion/off=0.0 µA			3.5				12			V
ON/OFF Current	Ion/off at Von/off=0.0V								1		mA
Leakage Current	Logic High, Von/off=15V							300			uA
Output Voltage Trim Range	Pout ≦ max rated power (65W)			-17					+5		%
	Iout ≦ max 120% rated Iout			-25				-17		%
Output Over-Voltage Protection	Over full temp range; %of nominal Vout			124		130		150		%
GENERAL SPECIFICATIONS
MTBF	Io=80% of Io, max; Ta=40°C						TBD				M hours
Weight						31					grams
Over-Temperature Shutdown	Refer to Figure 20 for measuring point					129					°C

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