NPN General Purpose Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

Symbol

Parameter

 

Test Conditions

Min

Max

Units

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = 1.0 mA, IB = 0

 

30

 

V

V(BR)CBO

Collector-Base Breakdown Voltage

 

IC = 10 μA, IE = 0

 

40

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

 

IE = 10 μA, IC = 0

 

5.0

 

V

ICBO

Collector Cutoff Current

 

VCB = 20 V, IE = 0

 

 

50

nA

IEBO

Emitter Cutoff Current

 

VEB = 3.0 V, IC = 0

 

 

50

nA

ON CHARACTERISTICS*

 

 

 

 

 

 

 

 

hFE

DC Current Gain

 

VCE = 1.0 V, IC = 2.0 mA

 

50

150

 

 

 

 

 

VCE = 1.0 V, IC = 50 mA

 

25

 

 

 

VCE(sat)

Collector-Emitter Saturation Voltage

 

IC = 50 mA, IB = 5.0 mA

 

 

0.3

V

VBE(sat)

Base-Emitter Saturation Voltage

 

IC = 50 mA, IB = 5.0 mA

 

 

0.95

V

SMALL SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cob

Output Capacitance

 

VCB = 5.0 V, f = 100 kHz

 

 

 

4.0

pF

 

Cib

Input Capacitance

 

VEB = 0.5 V, f = 0.1 MHz

 

 

 

8.0

pF

hfe

Small-Signal Current Gain

 

IC = 2.0 mA, VCE = 10 V,

 

 

 

 

 

 

 

 

 

f = 1.0 kHz

 

 

50

200

 

 

 

 

 

IC = 10 mA, VCE = 20 V,

 

 

 

 

 

 

 

 

 

f = 100 MHz

 

 

2.5

 

 

 

fT

Current Gain - Bandwidth Product

 

IC = 10 mA, VCE = 20 V

 

 

250

 

MHz

 

 

 

f = 100 MHz

 

 

 

 

 

 

NF

Noise Figure

 

VCE = 5.0 V, IC = 100 μA,

 

 

 

6.0

dB

 

 

 

RS = 1.0 kΩ,

 

 

 

 

 

 

 

 

 

BW = 10 Hz to 15.7 kHz

 

 

 

 

 

 

*Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%

 

 

 

 

 

 

 

 

2N4123

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Fairchild 2N4123 NPN General Purpose Amplifier Electrical Characteristics, Symbol Parameter Test Conditions Min Max Units