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2N4123

C

TO-92

 

B E

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

 

 

Symbol

Parameter

 

Value

Units

 

 

 

 

 

VCEO

Collector-Emitter Voltage

 

30

V

VCBO

Collector-Base Voltage

 

40

V

 

 

 

 

 

VEBO

Emitter-Base Voltage

 

5.0

V

IC

Collector Current - Continuous

 

200

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

 

 

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

 

 

2N4123

 

PD

Total Device Dissipation

 

 

625

mW

 

Derate above 25°C

 

 

5.0

mW/°C

RθJC

Thermal Resistance, Junction to Case

 

83.3

°C/W

 

 

 

 

 

RθJA

Thermal Resistance, Junction to Ambient

 

200

°C/W

 

 

 

 

 

 

2N4123

© 2001 Fairchild Semiconductor Corporation

2N4123, Rev A

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Fairchild 2N4123 manual Absolute Maximum Ratings, Thermal Characteristics, Symbol Parameter, Units