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2N4123
C | |
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NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* | TA = 25°C unless otherwise noted |
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Symbol | Parameter |
| Value | Units |
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VCEO |
| 30 | V | |
VCBO |
| 40 | V | |
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VEBO |
| 5.0 | V | |
IC | Collector Current - Continuous |
| 200 | mA |
TJ, Tstg | Operating and Storage Junction Temperature Range |
| °C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics | TA = 25°C unless otherwise noted |
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Symbol | Characteristic |
| Max | Units | |
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| 2N4123 |
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PD | Total Device Dissipation |
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| 625 | mW |
| Derate above 25°C |
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| 5.0 | mW/°C |
RθJC | Thermal Resistance, Junction to Case |
| 83.3 | °C/W | |
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RθJA | Thermal Resistance, Junction to Ambient |
| 200 | °C/W | |
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2N4123
© 2001 Fairchild Semiconductor Corporation | 2N4123, Rev A |