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2N4123
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NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* | TA = 25°C unless otherwise noted  | 
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Symbol | Parameter | 
  | Value  | Units | 
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VCEO  | 
  | 30  | V  | |
VCBO  | 
  | 40  | V  | |
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VEBO  | 
  | 5.0  | V  | |
IC  | Collector Current - Continuous  | 
  | 200  | mA  | 
TJ, Tstg | Operating and Storage Junction Temperature Range | 
 | °C  | |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics | TA = 25°C unless otherwise noted  | 
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Symbol | Characteristic | 
  | Max | Units | |
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  | 2N4123 | 
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PD  | Total Device Dissipation  | 
  | 
  | 625  | mW  | 
  | Derate above 25°C  | 
  | 
  | 5.0  | mW/°C  | 
RθJC  | Thermal Resistance, Junction to Case  | 
  | 83.3  | °C/W  | |
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RθJA  | Thermal Resistance, Junction to Ambient  | 
  | 200  | °C/W  | |
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2N4123
© 2001 Fairchild Semiconductor Corporation  | 2N4123, Rev A  |