Fairchild BSS84 manual Electrical Characteristics

Models: BSS84

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Electrical Characteristics

 

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

Off Characteristics

 

 

 

 

 

 

 

 

 

 

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = –250 µ A

–50

 

 

V

 

∆ BVDSS

Breakdown Voltage Temperature

ID = –250 µ A,Referenced to 25° C

 

–48

 

mV/° C

 

∆ TJ

Coefficient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IDSS

Zero Gate Voltage Drain Current

VDS = –50 V,

VGS = 0 V

 

 

 

–15

µ

A

 

 

 

VDS = –50 V,VGS = 0 V TJ = 125° C

 

 

–60

µ

A

 

IGSS

Gate–Body Leakage.

VGS = ± 20 V,

VDS = 0 V

 

 

 

± 10

nA

 

On Characteristics (Note 2)

 

 

 

 

 

 

 

 

 

 

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = –1 mA

–0.8

–1.7

–2

V

 

∆ VGS(th)

Gate Threshold Voltage

ID = –1 mA,Referenced to 25° C

 

3

 

mV/° C

 

∆ TJ

Temperature Coefficient

 

 

 

 

 

 

 

 

 

 

RDS(on)

Static Drain–Source

VGS = –5 V,

ID = –0.10 A

 

1.2

10

 

 

 

 

On–Resistance

VGS = –5 V,ID = –0.10 A,TJ=125° C

 

1.9

17

 

 

 

 

ID(on)

On–State Drain Current

VGS = –5 V,

VDS = – 10 V

–0.6

 

 

A

 

gFS

Forward Transconductance

VDS = –25V,

ID = – 0.10 A

0.05

0.6

 

S

 

Dynamic Characteristics

 

 

 

 

 

 

 

 

 

 

Ciss

Input Capacitance

VDS = –25 V,

V GS = 0 V,

 

73

 

pF

 

Coss

Output Capacitance

f = 1.0 MHz

 

 

 

10

 

pF

 

Crss

Reverse Transfer Capacitance

 

 

 

 

5

 

pF

 

RG

Gate Resistance

VGS = –15 mV, f = 1.0 MHz

 

9

 

 

 

 

Switching Characteristics (Note 2)

 

 

 

 

 

 

 

 

 

 

td(on)

Turn–On Delay Time

VDD = –30 V,

ID = – 0.27A,

 

2.5

5

ns

 

tr

Turn–On Rise Time

VGS = –10 V,

RGEN = 6 Ω

 

 

6.3

13

ns

 

td(off)

Turn–Off Delay Time

 

 

 

 

10

20

ns

 

tf

Turn–Off Fall Time

 

 

 

 

4.8

9.6

ns

 

Qg

Total Gate Charge

VDS = –25 V,

ID = –0.10 A,

 

0.9

1.3

nC

 

Qgs

Gate–Source Charge

VGS = –5 V

 

 

 

0.2

 

nC

 

 

 

 

 

 

 

Qgd

Gate–Drain Charge

 

 

 

 

0.3

 

nC

 

Drain–Source Diode Characteristics and Maximum Ratings

 

 

 

 

 

 

 

IS

Maximum Continuous Drain–Source Diode Forward Current

 

 

 

–0.13

A

 

VSD

Drain–Source Diode Forward

VGS = 0 V,

IS = –0.26 A(Note 2)

 

–0.8

–1.2

V

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

trr

Diode Reverse Recovery Time

IF = –0.10A

 

 

 

10

 

nS

 

Qrr

Diode Reverse Recovery Charge

diF/dt = 100 A/µs

(Note 2)

 

3

 

nC

Notes:

1.Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design.

a) 350°C/W when mounted on a minimum pad..

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

BSS84

BSS84 Rev B(W)

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Fairchild BSS84 manual Electrical Characteristics