| Electrical Characteristics | TA = 25°C unless otherwise noted |
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| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units | ||||
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| Off Characteristics |
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| BVDSS | VGS = 0 V, | ID = |
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| V | |||||
| ∆ BVDSS | Breakdown Voltage Temperature | ID = |
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| mV/° C | |||||
| ∆ TJ | Coefficient |
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| IDSS | Zero Gate Voltage Drain Current | VDS = | VGS = 0 V |
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| µ | A | ||
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| VDS = |
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| µ | A | ||||
| IGSS | VGS = ± 20 V, | VDS = 0 V |
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| ± 10 | nA | |||
| On Characteristics (Note 2) |
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| VGS(th) | Gate Threshold Voltage | VDS = VGS, | ID = | V | ||||||
| ∆ VGS(th) | Gate Threshold Voltage | ID = |
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| mV/° C | ||||
| ∆ TJ | Temperature Coefficient |
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| RDS(on) | Static | VGS = | ID = |
| 1.2 | 10 | Ω |
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| VGS = |
| 1.9 | 17 |
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| ID(on) | VGS = | VDS = – 10 V |
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| A | |||||
| gFS | Forward Transconductance | VDS = | ID = – 0.10 A | 0.05 | 0.6 |
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| Dynamic Characteristics |
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| Ciss | Input Capacitance | VDS = | V GS = 0 V, |
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| Coss | Output Capacitance | f = 1.0 MHz |
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| 10 |
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| Crss | Reverse Transfer Capacitance |
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| RG | Gate Resistance | VGS = |
| 9 |
| Ω |
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| Switching Characteristics (Note 2) |
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| td(on) | VDD = | ID = – 0.27A, |
| 2.5 | 5 | ns | ||||
| tr | VGS = | RGEN = 6 Ω |
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| 6.3 | 13 | ns | |||
| td(off) |
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| 10 | 20 | ns | |||
| tf |
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| 4.8 | 9.6 | ns | |||
| Qg | Total Gate Charge | VDS = | ID = |
| 0.9 | 1.3 | nC | |||
| Qgs | VGS = |
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| 0.2 |
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| Qgd |
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| 0.3 |
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| IS | Maximum Continuous |
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| A | |||||
| VSD | VGS = 0 V, | IS = |
| V | ||||||
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| Voltage |
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| trr | Diode Reverse Recovery Time | IF = |
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| 10 |
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| Qrr | Diode Reverse Recovery Charge | diF/dt = 100 A/µs | (Note 2) |
| 3 |
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Notes:
1.Rθ JA is the sum of the
a) 350°C/W when mounted on a minimum pad..
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 ∝ s, Duty Cycle ≤ 2.0%
BSS84
BSS84 Rev B(W)