Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

Off Characteristics

 

 

 

 

 

 

 

 

 

 

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = –250 µ A

–50

 

 

V

 

∆ BVDSS

Breakdown Voltage Temperature

ID = –250 µ A,Referenced to 25° C

 

–48

 

mV/° C

 

∆ TJ

Coefficient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IDSS

Zero Gate Voltage Drain Current

VDS = –50 V,

VGS = 0 V

 

 

 

–15

µ

A

 

 

 

VDS = –50 V,VGS = 0 V TJ = 125° C

 

 

–60

µ

A

 

IGSS

Gate–Body Leakage.

VGS = ± 20 V,

VDS = 0 V

 

 

 

± 10

nA

 

On Characteristics (Note 2)

 

 

 

 

 

 

 

 

 

 

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = –1 mA

–0.8

–1.7

–2

V

 

∆ VGS(th)

Gate Threshold Voltage

ID = –1 mA,Referenced to 25° C

 

3

 

mV/° C

 

∆ TJ

Temperature Coefficient

 

 

 

 

 

 

 

 

 

 

RDS(on)

Static Drain–Source

VGS = –5 V,

ID = –0.10 A

 

1.2

10

 

 

 

 

On–Resistance

VGS = –5 V,ID = –0.10 A,TJ=125° C

 

1.9

17

 

 

 

 

ID(on)

On–State Drain Current

VGS = –5 V,

VDS = – 10 V

–0.6

 

 

A

 

gFS

Forward Transconductance

VDS = –25V,

ID = – 0.10 A

0.05

0.6

 

S

 

Dynamic Characteristics

 

 

 

 

 

 

 

 

 

 

Ciss

Input Capacitance

VDS = –25 V,

V GS = 0 V,

 

73

 

pF

 

Coss

Output Capacitance

f = 1.0 MHz

 

 

 

10

 

pF

 

Crss

Reverse Transfer Capacitance

 

 

 

 

5

 

pF

 

RG

Gate Resistance

VGS = –15 mV, f = 1.0 MHz

 

9

 

 

 

 

Switching Characteristics (Note 2)

 

 

 

 

 

 

 

 

 

 

td(on)

Turn–On Delay Time

VDD = –30 V,

ID = – 0.27A,

 

2.5

5

ns

 

tr

Turn–On Rise Time

VGS = –10 V,

RGEN = 6 Ω

 

 

6.3

13

ns

 

td(off)

Turn–Off Delay Time

 

 

 

 

10

20

ns

 

tf

Turn–Off Fall Time

 

 

 

 

4.8

9.6

ns

 

Qg

Total Gate Charge

VDS = –25 V,

ID = –0.10 A,

 

0.9

1.3

nC

 

Qgs

Gate–Source Charge

VGS = –5 V

 

 

 

0.2

 

nC

 

 

 

 

 

 

 

Qgd

Gate–Drain Charge

 

 

 

 

0.3

 

nC

 

Drain–Source Diode Characteristics and Maximum Ratings

 

 

 

 

 

 

 

IS

Maximum Continuous Drain–Source Diode Forward Current

 

 

 

–0.13

A

 

VSD

Drain–Source Diode Forward

VGS = 0 V,

IS = –0.26 A(Note 2)

 

–0.8

–1.2

V

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

trr

Diode Reverse Recovery Time

IF = –0.10A

 

 

 

10

 

nS

 

Qrr

Diode Reverse Recovery Charge

diF/dt = 100 A/µs

(Note 2)

 

3

 

nC

Notes:

1.Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design.

a) 350°C/W when mounted on a minimum pad..

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

BSS84

BSS84 Rev B(W)

Page 2
Image 2
Fairchild BSS84 manual Electrical Characteristics, On Characteristics Note, Dynamic Characteristics

BSS84 specifications

The Fairchild BSS84 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely recognized for its robust performance in various applications such as switching and amplification. Designed for low voltage and low current applications, it is particularly well-suited for portable devices and power management systems.

One of the main features of the BSS84 is its low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications requiring high efficiency, as it contributes to reduced heat generation, thereby enhancing device longevity. With an RDS(on) value typically around 1.0 ohm, the BSS84 can efficiently handle moderate current loads, making it ideal for battery management systems and power multiplexing.

Another significant feature of the BSS84 is its low gate threshold voltage (VGS(th)), typically ranging from 0.8V to 3V. This allows the MOSFET to be easily driven by low-voltage logic levels, ensuring compatibility with modern microcontrollers and other digital circuitry. This attribute is particularly advantageous in handheld electronic devices where power efficiency and space-saving are paramount.

The BSS84 also showcases fast switching capabilities, contributing to its effectiveness in high-speed application environments. Its rise and fall times allow for rapid switching, which is essential in applications such as pulse width modulation (PWM) for motor control and switching power supplies. The capability to operate at high frequencies also aids in improving the efficiency of these systems.

In terms of packaging, the BSS84 is available in a variety of formats, including surface-mount options that enable designers to save space on printed circuit boards. This versatility in form factor makes it easily adaptable to a broad range of technologies from consumer electronics to industrial applications.

The BSS84 is built using advanced semiconductor technology, ensuring durability and reliability under varying environmental conditions. Its thermal characteristics allow for effective heat dissipation, enabling the MOSFET to maintain stable performance across a wide temperature range.

These features collectively make the Fairchild BSS84 a favored choice among engineers and designers in various sectors, particularly where efficiency, compactness, and reliability are critical. Whether in automotive, computing, or telecommunications, the BSS84 continues to serve as a crucial component in modern electronic designs.