Fujitsu Transistor, Interconnect, 130nm node CMOS Process CS90A, Cell Size = 1.98µm2, Sram

130nm node CMOS Process (CS90A)

Transistor SRAM

1.65µm

Cell Size = 1.98µm2

(1.2µm x 1.65µm)

(2nd Generation SRAM)

Interconnect

Al

Al

7-Cu

6-Cu

SiLK5-Cu

4-Cu

3-Cu

2-Cu

1-Cu

SiO2

Global Metal:

AL (Fuse & Pad)

Pitch: 1.8∝m

Semi Global Metal:

Thick Cu + SiO2

Pitch: 0.6∝m

Intermediate Metal:

Thin Cu + SiLK

Pitch: 0.4∝m

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