NXP Semiconductors BFU725F manual Parameter, Symbol, Conditions, Value

Models: BFU725F

1 2
Download 2 pages 49.74 Kb
Page 2
Image 2
Parameter

Parameter

Symbol

Conditions

Value

Collector-emitter breakdown

BVCEO

IC = 1 mA; IB = 0

3.2 V

voltage

 

 

 

 

Maximum collector current

IC(max)

 

 

40 mA

Transition frequency

fT

VCE = 2 V; IC = 25 mA; f = 2 GHz

68 GHz

 

 

VCE = 2 V; IC = 5 mA; f = 1.8 GHz; Γs = Γopt

0.4 dB

Noise figure

NF

VCE = 2 V; IC = 5 mA; f = 2.4 GHz; Γs = Γopt

0.45 dB

 

 

 

 

 

VCE = 2 V; IC = 5 mA; f = 5.8 GHz; Γs = Γopt

0.7 dB

 

 

VCE = 2

V; IC = 5 mA; f = 12 GHz; Γs = Γopt

1.0 dB

 

 

VCE = 2

V; IC = 25 mA; f = 1.8 GHz

26.6 dB

Maximum stable power gain

MSG / GP(max)

VCE = 2

V; IC = 25 mA; f = 2.4 GHz

25.5 dB

 

 

 

 

 

VCE = 2 V; IC = 25 mA; f = 12 GHz

13 dB

 

 

VCE = 2

V; IC = 25 mA; f = 5.8 GHz

17 dB

Quick reference data

Transition frequency as a function of collector current (typical values)

Gain as a function of frequency (typical values)

www.nxp.com

©2006 NXP B.V.

 

All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Date of release: October 2006

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and

Document order number: 9397 750 15784

reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.

Printed in the Netherlands

Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

 

Page 2
Image 2
NXP Semiconductors BFU725F manual Parameter, Symbol, Conditions, Value