NXP Semiconductors BFU725F manual Key features, Key benefits, Key applications

SiGeC microwave NPN transistor BFU725F

A perfect match up to 20 GHz

Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.

Key features

ÑVery low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)

ÑHigh maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz)

ÑHigh switching frequency (fT >100 GHz / fMAX >150 GHz)

ÑPlastic surface-mount SOT343F package

Key benefits

ÑSiGeC process delivers high switching frequency from a silicon-based device

ÑCost-effective alternative to GaAs devices

ÑRoHS compliant

Key applications

ÑGPS systems

ÑDECT phones

ÑLow noise amplifi er (LNA) for microwave communications systems

Ñ2nd stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs)

ÑSatellite radio

ÑWLAN and CDMA applications

ÑLow-noise microwave applications

The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise fi gure, it’s perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency,

it’s your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar.

The BFU725F get its outstanding performance from our innovative silicon-germanium-carbon (SiGeC) BiCMOS process. QUBiC4X was designed specifi cally to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process.

In addition, with the BFU725F, you don’t need a biasing IC or negative biasing voltage. So it’s a much more cost-effective solution than GaAs pHEMT devices.