Philips Semiconductors Product specification
Logic level TOPFET PIP3107-D OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Off-state VIS = 0 V
V(CL)DSS Drain-source clamping voltage ID = 10 mA 50 - - V
IDM = 2 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V
IDSS Drain source leakage current VDS = 40 V - - 100 µA
Tmb = 25 ˚C - 0.1 10 µA
On-state IDM = 6 A; tp ≤ 300 µs; δ ≤ 0.01
RDS(ON) Drain-source resistance VIS ≥ 4.4 V - - 95 mΩ
Tmb = 25 ˚C - 36 50 mΩ
VIS ≥ 4 V - - 100 mΩ
Tmb = 25 ˚C - 39 55 mΩ
OVERLOAD CHARACTERISTICS
-40˚C ≤ Tmb ≤ 150˚C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Short circuit load VDS = 13 V
IDDrain current limiting VIS = 5 V; Tmb = 25˚C 16 24 32 A
4.4 V ≤ VIS ≤ 5.5 V 12 - 36 A
4 V ≤ VIS ≤ 5.5 V 8 - 36 A
Overload protection VIS = 5 V;Tmb = 25˚C
PD(TO) Overload power threshold device trips if PD > PD(TO) 40 120 160 W
TDSC Characteristic time which determines trip time1200 350 600 µs
Overtemperature protection
Tj(TO) Threshold junction 150 170 - ˚C
temperature2
1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage VIS.
October 2001 3 Rev 1.000