NXP Semiconductors TFA9810 12.3 AC characteristics measured in a typical application

TFA9810_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 20 February 2008 17 of 29
NXP Semiconductors TFA9810
Audio amplifier 2 x 12 W
[1] High-side and low-side power switch have the same series resistance.
[2] Output power measured across the loudspeaker load. Output power is measured indirectly via RDSon.
12.3 AC characteristics measured in a typical application
tresp response time transition PWM output from
LOW to HIGH
VI = 70 mV
VI = 3.3 V
-
-
60
50
-
-
ns
ns
transition PWM output from
HIGH to LOW
VI = 70 mV
VI = 3.3 V
-
-
60
50
-
-
ns
ns
tw(min) minimum pulse width PWM output - 60 - ns
RDSon drain-source on-state
resistance
[1] - 0.28 0.35 Ω
ηpo output power
efficiency output power 2x9Winto 8 Ω. Po= Po(nom)
[2] 87 89 - %
Table 10. Dynamic characteristics
…continued
T
amb
= 25 ° C; V
P
= 12 V; R
L
= 8 Ω ;Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 11. AC characteristics measured in typical application
T
amb
= 25 ° C; V
P
= 12 V; R
L
= 8 Ω; f
osc
= 550 kHz; Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VPsupply voltage VP= VDDPx − VSSPx 8 1220V
Po(RMS) RMS output power RL = 8 Ω; VP = 12 V;
THD = 10 %; Two channel
driven; no heat sink required.
- 9.5 - W
Pooutput power VP= 12 V; RL= 8 Ω
THD = 10 % 8.5 9.5 - W
THD = 1 % 6.5 7.5 - W
VP = 14 V; RL= 8 Ω;
THD = 10 %; thermally limited -12-W
VP= 16 V; RL = 8 Ω;
THD = 10 %; thermally limited -15-W
VP = 12 V; RL = 6 Ω;
THD = 10 %; thermally limited -12-W
VP = 12 V; RL = 4 Ω;
THD = 10 %; thermally limited -15-W
THD+N total harmonic
distortion-plus-noise Po is 1 W; f = 1 kHz; AES17
brick-wall filter - 0.04 0.1 %
ηpo output power
efficiency Po = 9 W 87 89 - %
Gv(cl) closed-loop voltage
gain VI = 100 mV (RMS); fi= 1 kHz 19 19.7 21 dB
Vn(o) output noise voltage Inputs shorted;
AES17 brick-wall filter
- 150 - µV