Photomicrosensor (Transmissive) EE-SX1107 1
Photomicrosensor (Transmissive)
EE-SX1107■Dimensions
Note:All units are in millimeters unless otherwise indicated.
■Features
•Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
•PCB surface mounting type.
•High resolution with a 0.15-mm-wide aperture.
•RoHS Compliant.
■Absolute Maximum Ratings (Ta = 25°C)
Note:1. Refer to the temperature rating chart i f the ambient temper-
ature exceeds 25°C.
2. Duty: 1/100; Pulse wid th: 0.1 ms
3. Complete soldering withi n 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■Ordering Information
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Recommended Soldering
Pattern
Optical
axis
Cross section AA
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Symbol Rated value
Emitter Forward current IF25 mA (seenote 1)
Pulse forward current IFP 100 mA (seenote 2)
Reverse voltage VR5 V
Detector Collector–Emitter
voltage
VCEO 20 V
Emitter–Collector
voltage
VECO 5 V
Collector current IC20 mA
Collector dissipation PC75 mW (seeno te 1)
Ambient
temperature
Operating Topr –30°C to 85°C
Storage Tstg –40°C to 90°C
Reflow soldering Tsol 240°C (see note 3)
Manual soldering Tsol 300°C (see note 3)
Description Model
Photomicrosensor (trans missive) EE-SX1107
Item Symbol Value Condition
Emitter Forward voltage VF1.1 V typ., 1.3 V max. IF = 5 mA
Reverse current IR10 µA max. VR = 5 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current ID100 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
Peak spectral sensitivity wavelength λP900 nm typ. ---
Rising time tr 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Falling time tf 10 µs typ. VCC = 5 V, RL = 1 kΩ,
IL = 100 µA