Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00036BED
MA2Z748

Silicon epitaxial planar type

For super high speed switching
For small current rectification
■Features
•Low VF type of MA3X720
•Low forward voltage VF and good rectification efficiency
•Optimum for high frequency rectification because of its short
reverse recovery time trr
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR20 VRepetitive peak reverse voltage VRRM 20 VForward current (Average) IF(AV) 300 mANon-repetitive peak forward IFSM 3A
surge current *
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °C
Marking Symbol: 2K
Parameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 300 mA 0.4 VReverse current IRVR = 10 V 30 µATerminal capacitance CtVR = 0 V, f = 1 MHz 60 pFReverse recovery time *trr IF = IR = 100 mA 5 nsIrr = 0.1 IR, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 400 MHz.4.*: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).