Switching Diodes
1
Publication date: March 2004 SKF00017BED
Note) *:t = 1 s
MA3J142A (MA142A), MA3J142K (MA142K)
Silicon epitaxial planar type
For switching circuits
■Features
•Allowing high-density mounting
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current
*
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance
MA3J142A
CtVR = 0 V, f = 1 MHz 15 pF
MA3J142K
2
Reverse recovery time *
MA3J142A
trr IF = 10 mA, VR = 6 V 10 ns
MA3J142K
Irr = 0.1 IR , RL = 100 Ω3
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
Marking Symbol:
• MA3J142A: MB • MA3J142K: MI
Internal Connection
MA3J142A MA3J142K
1 Cathode Anode
2 N.C. N.C.
3 Anode Cathode
0.3
2.0
±0.2
1.3
±0.1
(0.65)
1
3
2
(0.65) 0.9
±0.1
2.1
±0.1
1.25
±0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
12
3
12
3
AK
EIAJ: SC-79
SMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).