Panasonic MA3J7000G manual

Schottky Barrier Diodes (SBD)
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Publication date: October 2007 SKH00192AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J7000G
Silicon epitaxial planar type
For high frequency rectification
■Features
•Forward current (Average) IF(AV) = 500 mA rectification is possible
•Optimum for high frequency rectification because of its short re-
verse recovery time trr
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Repetitive peak reverse voltage VRRM 40 V
Forward current (Average) IF(AV) 500 mA
Non-repetitive peak forward IFSM 2A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 500 mA 0.55 V
Reverse current IRVR = 35 V 100 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 60 pF
Reverse recovery time *trr IF = IR = 100 mA 5 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 400 MHz. 4.*: trr measurement circuit
■Package
•Code
SMini3-F2
•Pin Name
1: Anode
2: N.C.
3: Cathode
■Marking Symbol: M2V
■Internal Connection
12
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