Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00057BED
MA3J744 (MA744)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•High-density mounting is possible
•Forward current (Average) IF(AV) = 200 mA rectification is possible
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) IF(AV) 200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: M1M
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 0.55 V
Reverse current IRVR = 30 V 50 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 30 pF
Reverse recovery time *trr IF = IR = 100 mA 3.0 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
1 : Anode
2 : N.C.
3 : Cathode
EIAJ: SC-79 SMini3-F1 Package
Unit: mm
0.3
2.0
±0.2
1.3
±0.1
(0.65)
1
3
2
(0.65) 0.9
±0.1
2.1
±0.1
1.25
±0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
Note) *:t = 1 s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz.
4.*:t
rr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).