Panasonic MTM86627 manual

Multi Chip Discrete

Publication date: March 2008 SJF00085AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

MTM86627

Silicon P-channel MOS FET (FET)

Silicon epitaxial planar type (SBD)

For DC-DC converter

For switching circuits

 Overview

MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky

Barrier Diode) that is highly suitable for DC-DC converter and other switching

circuits.

 Features

 Built-in schottky barrier diode: VR = 15 V, IF = 700 mA

 Low on-resistance: Ron = 80 mW (VGS = –4.0 V)

 Low

short-circuit input capacitance (Common source)

: Ciss = 300 pF

 Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)

 Low drive Voltage: 1.8 V drive

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

FET

Drain-source surrender voltage VDSS –20 V

Gate-source surrender voltage VGSS ±10 V

Drain current ID–2.0 A

Peak drain current IDP –8.0 A

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

SBD

Reverse voltage VR15 V

Forward current (Average) IF(AV) 700 mA

Junction temperature Tj125 °C

Storage temperature Tstg –55 to +125 °C

Overall Total power dissipation *PD540 mW

Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm

Absolute maximum rating without heat sink for PD is 150 mA

 Package

Code

WSSMini6-F1

Pin Name

1: Gate 4: Cathode

2: Source 5: Drain

3: Anode 6: Drain

 Marking Symbol: PK

 Internal Connection

(G) 2

(S) 3

(A)

(K)

(D)