MTM86627 2 SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = –1.0 mA, VGS = 0 –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 mA
Gate-source cutoff current IGSS VGS = ±8 V, VDS = 0 ±10 mA
Gate threshold voltage VTH ID = –1.0 mA, VDS = –10 V – 0.4 – 0.75 –1.1 V
Drain-source ON resistance *1RDS(on)
ID = –1.0 A, VGS = –4.0 V 80 120
mW
ID = –1.0 A, VGS = –2.5 V 100 170
ID = – 0.5 A, VGS = –1.8 V 140 230
Forward transfer admittance *1YfsID = –1.0 A, VDS = –10 V, f = 1 MHz 3.0 S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
300 pF
Short-circuit output capacitance (Common source)
Coss 30 pF
Reverse transfer capacitance (Common source)
Crss 35 pF
Turn-on delay time *2td(on)
VDD = –10 V, VGS = 0 V to –4 V, ID = –1 A
6 ns
Rise time *2tr8 ns
Turn-off delay time *2td(off)
VDD = –10 V, VGS = –4 V to 0 V, ID = –1 A
57 ns
Fall time *2tf55 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff measurement circuit
VCC = −10 V
PW = 10 µs
Duty Cycle ≤ 1% ID = −1.0 A
RL = 10 Ω
VOUT
VIN
D
G
S
VIN
50 Ω
td(on) td(off)
0 V
−4 V VIN
VOUT
10%
90%
90%
10%
trtf
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF
IF = 500 mA 0.42 V
IF = 700 mA 0.45 V
Reverse current IR
VR = 6 V 90 mA
VR = 15 V 250 mA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.