MTM86627 SJF00085AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
PD Ta ID VDS RDS(on) VGS
RDS(on) ID CX VDS
040 80 160120
0
400
200
600
MTM86627_ PD-Ta
Drain power dissipation PD (mW)
Ambient temperature Ta (°C)
Single unit
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
0− 0.2 − 0.4 −1.0− 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86627_ ID-VDS
Drain current ID (A)
Drain-source voltage VDS (V)
−1.1 V
−1.0 V
− 0.9 V
− 0.8 V
VGS = −1.3 V
0−2−8−6−4
10
100
1
000
MTM86627_ RDS(on)-VGS
Drain-source ON resistance RDS(on) (Ω)
Gate-source voltage VGS (V)
ID = −1.0 A
0− 0.5 −1.0 −1.5 −2.0
10−2
10−1
1
MTM86627_ RDS(on)-ID
Drain-source ON resistance RDS(on) (Ω)
Drain current ID (A)
VGS = 1.8 V
4.0 V
2.5 V
−50 −15 −20−10
0
100
200
300
400
MTM86627_ CX-VDS
Drain-source voltage VDS (V)
Short-circuit input capacitance (Common source)
Ciss ,
Short-circuit output capacitance (Common source)
Coss ,
Reverse transfer capacitance (Common source) Crss (pF)
Ciss
Coss
Crss
Characteristics charts of FET
Characteristics charts of SBD
IF VF IR VR Ct VR
0 0.2 0.60.4
1
10−1
10−5
10−4
10−3
10−2
MTM86627_IF-VF
Forward current IF (A)
Forward voltage VF (V)
Ta = 75°C
−25°C
25°C
0 10 20
10−1
10
102
103
1
MTM86627_IR-VR
Reverse current IR (µA)
Reverse voltage VR (V)
Ta = 75°C
−25°C
25°C
0 2010
0
40
20
60
80
100
MTM86627_Ct-VR
Terminal capacitance Ct (pF)
Reverse voltage VR (V)
f = 1 MHz
Ta = 25°C