Panasonic MTM86628 manual

Multi Chip Discrete

Publication date: November 2008 SJF00111AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

MTM86628

Silicon P-channel MOS FET (FET)

Silicon epitaxial planar type (SBD)

For DC-DC converter

For switching circuits

 Overview

MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky

Barrier Diode) that is highly suitable for DC-DC converter and other switching

circuits.

 Features

 Built-in schottky barrier diode: VR = 15 V, IF = 700 mA

 Low on-resistance: Ron = 300 mW (VGS = –4.0 V)

 Low short-circuit input capacitance (Common source): Ciss = 80 pF

 Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm × 1.6

mm × 0.5 mm)

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

FET

Drain-source surrender voltage VDSS –20 V

Gate-source surrender voltage VGSS ±12 V

Drain current ID–1.0 A

Peak drain current *1IDP –4.0 A

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Total power dissipation

PD1 *2540 mW

PD2 *3150 mW

SBD

Reverse voltage VR15 V

Forward current (Average) IF(AV) 700 mA

Junction temperature Tj125 °C

Storage temperature Tstg –55 to +125 °C

Note) *1: t = 10 µs, Duty Cycle < 1%

*2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm

Copper foil of the drain portion should have a area of 300 mm2 or more

*3: Stand-alone (without the board)

 Package

Code

WSSMini6-F1

Pin Name

1: Gate 4: Cathode

2: Source 5: Drain

3: Anode 6: Drain

 Marking Symbol: PL

 Internal Connection

(G) 2

(S) 3

(A)

(K)

(D)