MTM86628 2 SJF00111AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = –1.0 mA, VGS = 0 –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 µA
Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 µA
Gate threshold voltage VTH ID = –1.0 mA, VDS = –10 V – 0.45 –1.0 –1.5 V
Drain-source ON resistance RDS(on)
ID = – 0.5 A, VGS = –4.0 V 300 420 mW
ID = – 0.5 A, VGS = ���2.5 V 420 560
Forward transfer admittance YfsID = – 0.5 A, VDS = –10 V 1.0 2.0 S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
80 pF
Short-circuit output capacitance (Common source)
Coss 12 pF
Reverse transfer capacitance (Common source)
Crss 12 pF
Turn-on delay time *td(on)
VDD = –15 V, VGS = –4.0 V, ID = – 0.5 A
12 ns
Rise time *tr6 ns
Turn-off delay time *td(off) 17 ns
Fall time *tf10 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , toff measurement circuit
VDD = −15 V
PW = 10 µs
Duty Cycle ≤ 1% ID = − 0.5 A
RL = 30 Ω
VOUT
VIN
D
G
S
VIN
50 Ω
td(on) td(off)
0 V
−4 V VIN
VOUT
10%
90%
90%
10%
trtf
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF
IF = 500 mA 0.42 V
IF = 700 mA 0.45 V
Reverse current IR
VR = 6 V 90 µA
VR = 15 V 250 µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.