MTM86628 SJF00111AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
PD Ta ID VDS RDS(on) VGS
RDS(on) ID CX VDS
040 80 160120
0
400
200
600
MTM86628_ PD-Ta
Total power dissipation PD (mW)
Ambient temperature Ta (°C)
0− 0.2 − 0.4 −1.0− 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86628_ ID-VDS
Drain current ID (A)
Drain-source voltage VDS (V)
−1.4 V
−1.2 V
VGS = −1.6 V
0−2−10−8−6−4
0.1
0.2
0.3
0.4
0.5
MTM86628_ RDS(on)-VGS
Drain-source ON resistance RDS(on) (Ω)
Gate-source voltage VGS (V)
ID = − 0.5 A
− 0.1 −1.0
0
0.1
0.2
0.3
0.4
0.5
MTM86628_ RDS(on)-ID
Drain-source ON resistance RDS(on) (Ω)
Drain current ID (A)
VGS = 2.5 V
4.0 V
−50 −15 −20−10
0
20
40
60
120
100
80
MTM86628_ CX-VDS
Drain-source voltage VDS (V)
Short-circuit input capacitance (Common source)
Ciss ,
Short-circuit output capacitance (Common source)
Coss ,
Reverse transfer capacitance (Common source) Crss (pF)
Ciss
Coss
Crss
Characteristics charts of FET
Characteristics charts of SBD
IF VF IR VR Ct VR
0 0.2 0.60.4
103
1
10
102
MTM86628_IF-VF
Forward current IF (mA)
Forward voltage VF (V)
Ta = 75°C
−25°C
25°C
0 9 1263 15
10−1
1
10
103
102
104
MTM86628_IR-VR
Reverse current IR (µA)
Reverse voltage VR (V)
Ta = 75°C
−25°C
25°C
0 2010 155
0
40
20
60
80
100
MTM86628_Ct-VR