UP05C8GF
2 SJJ00352BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC = 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 100 250
Transition frequency *fTVCB = 10 V, IE = -15 mA, f = 200 MHz 1
300 MHz
Power gain PG VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG = 0 3.8 5.2 mA
Output impedance ZOVDS = 10 V, VG = 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.