UP05C8GF
SJJ00352BED 3
This product complies with the RoHS Directive (EU 2002/95/EC). PT Ta IC VCE IC IB
IC VBE VCE(sat) IC hFE IC
IP VDS
0 40 80 120
0
120
80
40
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
UN05C8GF_PT-Ta
0 4 8 12
0
8
12
4
Collector current IC (mA)
Collector-emitter voltage VCE (V)
UP05C8GF_IC-VCE
80 µA
40 µA
20 µA
Ta = 25°C
IB = 100 µA
60 µA
0 0.4 0.8
0
40
20
Collector current IC (mA)
Base current IB (A)
UP05C8GF_IC-IB
VCE = 6 V
0 0.4 1.20.8
0
40
50
10
20
30
Collector current IC (mA)
Base-emitter voltage VBE (V)
UP05C8GF_IC-VBE
VCE = 6 V
Ta = 85°C
−25°C
25°C
10−11 10 102
10−1
1
10−2
UP05C8GF_
VCE(sat)
-
IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
IC / IB = 10
Ta = 85°C
25°C
−25°C
1 10 102
120
160
80
40
0
UP05C8GF_
hFE
-
IC
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 85°C
−25°C
25°C
0 4 8 12 16
0
4
2
Peak current IP (mA)
Drain-source voltage VDS (V)
UN05C8GF_IP-VDS