1999 Jul 23 2
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
FEATURES
•Low current
•Very high power gain
•Low noise figure
•Integrated temperature compensated biasing
•Control pin for adjustment bias current
•Supply and RF output pin combined.
APPLICATIONS
•RF front end
•Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•Low noise amplifiers
•Satellite television tuners (SATV)
•High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN DESCRIPTION
1 GND
2 RF in
3 CTRL (bias current control)
4V
S
+ RF out
handbook, halfpage
Top view
MAM427
21
43
BIAS
CIRCUIT
CTRL
RFin GND
VS+RFout
Marking code: A3.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage RF input AC coupled −4.5 V
ISDC supply current VVS-OUT = 2.5 V; ICTRL = 1 mA;
RF input AC coupled 11 −mA
MSG maximum stable gain VVS-OUT = 2.5 V; f = 1800 MHz;
Tamb =25°C16 −dB
NF noise figure VVS-OUT = 2.5 V; f = 1800 MHz; ΓS=Γopt 1.8 −dB