Philips BGA2003 Silicon MMIC amplier BGA2003

1999 Jul 23 3
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; Tj=25°C; unless otherwise specified.
Note
1. See application note RNR-T45-99-B-0514.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSsupply voltage RF input AC coupled −4.5 V
VCTRL voltage on control pin −2V
I
Ssupply current (DC) forced by DC voltage on RF input
or ICTRL
−30 mA
ICTRL control current −3mA
P
tot total power dissipation Ts≤100 °C−135 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 350 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current VVS-OUT = 2.5 V; ICTRL = 0.4 mA 3 4.5 6 mA
VVS-OUT = 2.5 V; ICTRL = 1.0 mA 8 11 15 mA
MSG maximum stable gain VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz −24 −dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz −16 −dB
|s21|2insertion power gain VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz 18 19 −dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz 13 14 −dB
s12 isolation VVS-OUT = 2.5 V; IVS-OUT =0;
f = 900 MHz −26 −dB
VVS-OUT = 2.5 V; IVS-OUT =0;
f = 1800 MHz −20 −dB
NF noise figure VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz; ΓS=Γopt
−1.8 2 dB
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz; ΓS=Γopt
−1.8 2 dB
IP3(in) input intercept point; note 1 VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;
f = 900 MHz −−6.5 −dBm
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;
f = 1800 MHz −−4.8 −dBm