2002 Sep 10 2
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2712
FEATURES
•Internally matched to 50 Ω
•Wide frequency range (3.2 GHz at 3 dB bandwidth)
•Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
•5 dBm saturated output power at 1 GHz
•Good linearity (11 dBm IP3(out) at 1 GHz)
•Unconditionally stable (K > 1.5).
APPLICATIONS
•LNB IF amplifiers
•Cable systems
•ISM
•General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
widebandamplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3 RFout
4 GND1
6RFin
MAM455
132
41
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage 5 6 V
ISDC supply current 12.3 −mA
s212insertion power gain f = 1 GHz 21.3 −dB
NF noise figure f = 1 GHz 3.9 −dB
PL(sat) saturated load power f = 1 GHz 4.8 −dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSDC supply voltage RF input ACcoupled −6V
I
Ssupply current −35 mA
Ptot total power dissipation Ts≤90 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
PDmaximum drive power −10 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.