Philips BGA2712 specifications - page 3

2002 Sep 10 3
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
VS=5V; I
S= 12.3 mA; Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rthj-s thermal resistance from junction to
solder point Ptot = 200 mW; Ts≤90 °C 300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current 9 12.3 15 mA
s212insertion power gain f = 100 MHz 20 20.8 22 dB
f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB
RLIN return losses input f = 1 GHz 12 14 −dB
f = 2.2 GHz 8 10 −dB
RLOUT return losses output f = 1 GHz 17 20 −dB
f = 2.2 GHz 15 18 −dB
s122isolation f = 1.6 GHz 31 33 −dB
f = 2.2 GHz 36 39 −dB
NF noise figure f = 1 GHz −3.9 4.3 dB
f = 2.2 GHz −4.3 4.7 dB
BW bandwidth at s212−3 dB below flat gain at 1GHz 2.8 3.2 −GHz
K stability factor f = 1 GHz 1.5 2 −−
f = 2.2 GHz 2.5 3 −−
P
L(sat) saturated load power f = 1 GHz 3 4.8 −dBm
f = 2.2 GHz 0 1.3 −dBm
PL1dB load power at 1 dB gain compression; f = 1 GHz −2 0.2 −dBm
at 1 dB gain compression; f = 2.2 GHz −4−2−dBm
IP3(in) input intercept point f = 1 GHz −12 −10 −dBm
f = 2.2 GHz −14 −16 −dBm
IP3(out) output intercept point f = 1 GHz 9 11 −dBm
f = 2.2 GHz 4 6 −dBm