2001 Nov 02 5

Philips Semiconductors Product specification

750 MHz, 18.5 dB gain power doubler amplifier BGD712
handbook, halfpage
2000 400 800600
MCD842
f (MHz)
CTB
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)

Fig.2 Composite triple beat as a function of

frequency under tilted conditions.

(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB=24 V; 79channels;
tilt= 7.3dB (50 to550 MHz).
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
2000 400 800600
MCD843
f (MHz)
Xmod
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)

Fig.3 Crossmodulation as a function of frequency

under tilted conditions.

(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB=24 V; 79channels;
tilt= 7.3dB (50 to550 MHz).
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
2000 400 800600
MCD844
f (MHz)
CSO
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)

Fig.4 Composite second order distortion as a

function of frequency under tilted

conditions.

(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB=24 V; 79channels;
tilt= 7.3dB (50 to550 MHz).
(3) Typ.
(4) Typ. −3σ.