2001 Nov 02 2
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to750 MHz
frequency range.
DESCRIPTION
Hybridamplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f =45 MHz 18.2 18.8 dB
f =750 MHz 19 20 dB
Itot total current consumption (DC) VB= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C