
2001 Nov 02 3
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
CHARACTERISTICS
Bandwidth 40 to750 MHz; VB= 24V; Tmb =35°C; ZS=Z
L=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f =45 MHz 18.2 18.5 18.8 dB
f =750 MHz 19 19.5 20 dB
SL slope straight line f =45 to 750MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45to 100 MHz −−±0.35 dB
f = 100 to 700 MHz −−±0.5 dB
f = 700 to 750 MHz −−±0.15 dB
S11 input return losses f =45 to 80MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S22 output return losses f = 45to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 19 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S21 phase response f =50 MHz −45 −+45 deg
CTB composite tr iple beat 112 channels flat; Vo= 44 dBmV;
fm= 745.25 MHz
−−−62 dB
79 channels flat; Vo= 44 dBmV;
fm= 547.25 MHz
−−−68 dB
79 channels; fm= 445.25 MHz;
Vo= 49.3dBmV at547 MHz; note 2
−−−63 dB
Xmod cross modulation 112 channels flat; Vo= 44 dBmV;
fm= 55.25 MHz
−−−63 dB
79 channels flat; Vo= 44 dBmV;
fm= 55.25 MHz
−−−69 dB
79 channels; fm= 745.25 MHz;
Vo= 49.3dBmV at547 MHz; note 2
−−−60 dB