2001 Nov 01 6

Philips Semiconductors Product specification

860 MHz, 20 dB gain power doubler amplifier BGD814

handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD348
(1)
(2)
(3)
(4)

Fig.5 Composite triple beat as a function of

frequency under tilted conditions.

ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD349
(1)
(2)
(3)
(4)

Fig.6 Cross modulation as a function of frequency

under tilted conditions.

ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD350
(1)
(2)
(3)
(4)

Fig.7 Composite second order distortion as a

function of frequency under tilted conditions.

ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3σ.