2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 45 MHz 19.7 20.3 dB
f = 870 MHz 20.5 21.5 dB
Itot total current consumption (DC) VB= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C